Unveiling the Switching Mechanism of a TaO x /HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements
Self-selective cells (SSCs) with built-in nonlinearity provide a promising solution for overcoming the leakage current issue of 3-D vertical resistive random access memory arrays. However, deep understanding of the switching mechanism of the SSC device is still lacking, hindering the effective impro...
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| Veröffentlicht in: | IEEE electron device letters 2018-01, Vol.39 (8), p.1152 |
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| container_title | IEEE electron device letters |
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| creator | Gong, Tiancheng Luo, Qing Lv, Hangbing Xu, Xiaoxin Yu, Jie Yuan, Peng Dong, Danian Chen, Chuanbing Yin, Jiahao Lu, Tai Zhu, Xi Liu, Qi Long, Shibing Liu, Ming |
| description | Self-selective cells (SSCs) with built-in nonlinearity provide a promising solution for overcoming the leakage current issue of 3-D vertical resistive random access memory arrays. However, deep understanding of the switching mechanism of the SSC device is still lacking, hindering the effective improvement of the device performance. In this letter, we investigated the switching mechanism of the TaOx/HfO2 SSC device by probing the trap profiles with RTN measurements. Both the vertical locations and energy levels ([Formula Omitted], [Formula Omitted]) of defects in the HRS and LRS could be calculated by the bias-dependence of the capture and emission time constants ([Formula Omitted] and [Formula Omitted]). Using the comparison of the defect profiles before and after the resistive switching, an active region in the TaO x layer adjacent to the HfO2 layer could be clearly identified. Based on these results, a clear picture of resistive switching in the TaO x /HfO2 SSC was obtained. |
| doi_str_mv | 10.1109/LED.2018.2849730 |
| format | Article |
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However, deep understanding of the switching mechanism of the SSC device is still lacking, hindering the effective improvement of the device performance. In this letter, we investigated the switching mechanism of the TaOx/HfO2 SSC device by probing the trap profiles with RTN measurements. Both the vertical locations and energy levels ([Formula Omitted], [Formula Omitted]) of defects in the HRS and LRS could be calculated by the bias-dependence of the capture and emission time constants ([Formula Omitted] and [Formula Omitted]). Using the comparison of the defect profiles before and after the resistive switching, an active region in the TaO x layer adjacent to the HfO2 layer could be clearly identified. Based on these results, a clear picture of resistive switching in the TaO x /HfO2 SSC was obtained.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2018.2849730</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Dependence ; Energy levels ; Hafnium oxide ; Leakage current ; Random access memory ; Switching</subject><ispartof>IEEE electron device letters, 2018-01, Vol.39 (8), p.1152</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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However, deep understanding of the switching mechanism of the SSC device is still lacking, hindering the effective improvement of the device performance. In this letter, we investigated the switching mechanism of the TaOx/HfO2 SSC device by probing the trap profiles with RTN measurements. Both the vertical locations and energy levels ([Formula Omitted], [Formula Omitted]) of defects in the HRS and LRS could be calculated by the bias-dependence of the capture and emission time constants ([Formula Omitted] and [Formula Omitted]). Using the comparison of the defect profiles before and after the resistive switching, an active region in the TaO x layer adjacent to the HfO2 layer could be clearly identified. Based on these results, a clear picture of resistive switching in the TaO x /HfO2 SSC was obtained.</description><subject>Dependence</subject><subject>Energy levels</subject><subject>Hafnium oxide</subject><subject>Leakage current</subject><subject>Random access memory</subject><subject>Switching</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqNjDtPwzAUhS0EEuGxM16JOamv49TpXIo6FIpoEGPlRtfEleuU2Cn035NKsLOco_PQx9gd8gyRT0aL2UMmOJaZKOVE5fyMJVgUZcqLcX7OEq4kpjny8SW7CmHLOUqpZMKOb_5A1ln_AbEhWH3ZWDen9ER1o70NO2gNaKj0Er5hNDdLAStyJh2E6mgPBFNyDjZHeOnazR-n6vT-VBjrKMC7jQ28Vs8DVIe-ox35GG7YhdEu0O2vX7P7x1k1naf7rv3sKcT1tu07P0xrgaiQKyGK_H-vH-YVUjI</recordid><startdate>20180101</startdate><enddate>20180101</enddate><creator>Gong, Tiancheng</creator><creator>Luo, Qing</creator><creator>Lv, Hangbing</creator><creator>Xu, Xiaoxin</creator><creator>Yu, Jie</creator><creator>Yuan, Peng</creator><creator>Dong, Danian</creator><creator>Chen, Chuanbing</creator><creator>Yin, Jiahao</creator><creator>Lu, Tai</creator><creator>Zhu, Xi</creator><creator>Liu, Qi</creator><creator>Long, Shibing</creator><creator>Liu, Ming</creator><general>The Institute of Electrical and Electronics Engineers, Inc. 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However, deep understanding of the switching mechanism of the SSC device is still lacking, hindering the effective improvement of the device performance. In this letter, we investigated the switching mechanism of the TaOx/HfO2 SSC device by probing the trap profiles with RTN measurements. Both the vertical locations and energy levels ([Formula Omitted], [Formula Omitted]) of defects in the HRS and LRS could be calculated by the bias-dependence of the capture and emission time constants ([Formula Omitted] and [Formula Omitted]). Using the comparison of the defect profiles before and after the resistive switching, an active region in the TaO x layer adjacent to the HfO2 layer could be clearly identified. Based on these results, a clear picture of resistive switching in the TaO x /HfO2 SSC was obtained.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2018.2849730</doi></addata></record> |
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| subjects | Dependence Energy levels Hafnium oxide Leakage current Random access memory Switching |
| title | Unveiling the Switching Mechanism of a TaO x /HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements |
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