Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–G–Zn–O Thin-Film Transistors

In this paper, we investigated the influence of both source gas and deposition temperature in plasma-enhanced chemical vapor deposition (PE-CVD) for a SiO2 passivation layer on the electrical properties and reliability of a bottom-gate In–G–Zn–O thin-film transistor (IGZO TFT). Two gas chemistries c...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-01, Vol.65 (8), p.3257
Hauptverfasser:	Mehadi Aman, S G, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Conductors Electrical properties Gases Indium gallium zinc oxide Nitrous oxide Organic chemistry Passivity Performance enhancement Plasma enhanced chemical vapor deposition Reliability Semiconductor devices Silicon dioxide Tetraethyl orthosilicate Thin film transistors Transistors
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