n-ZnO/p-Si heterojunction nanodiodes based sensor for monitoring UV radiation

[Display omitted] •Vertically aligned c-axis oriented n-ZnO nanorod array was grown on the p-Si substrate using Co-doped ZnO compact targets.•UV sensor device was successfully fabricated using n-ZnO/p-Si heterojunction nanodiodes array.•IV-characteristics on illumination of UV radiation show good an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Sensors and actuators. A. Physical. 2018-08, Vol.279, p.351-360
Hauptverfasser: Sahare, P.D., Kumar, Sudhisht, Kumar, Surender, Singh, Fouran
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 360
container_issue
container_start_page 351
container_title Sensors and actuators. A. Physical.
container_volume 279
creator Sahare, P.D.
Kumar, Sudhisht
Kumar, Surender
Singh, Fouran
description [Display omitted] •Vertically aligned c-axis oriented n-ZnO nanorod array was grown on the p-Si substrate using Co-doped ZnO compact targets.•UV sensor device was successfully fabricated using n-ZnO/p-Si heterojunction nanodiodes array.•IV-characteristics on illumination of UV radiation show good and fast response.•Transient response of the device show good stability and very fast temporal response.•Spectral response of the responsivity (Rλ) and quantum efficiency (η) for the UV sensor show sharp decline in visible range ZnO nanowire array on p-type Si (100) substrate based PN-heterojunction photodiode type UV radiation detector was fabricated using rf-magnetron sputtering. The detector exhibited visible blindness below the band gap of the material (3.2 eV) and ultra-fast response for ultraviolet radiation with a peak responsivity at around 380 nm. The temporal photocurrent response of the detector was measured to be 0.1 s which is much better than a commercially available UV-detector. The design, construction and working of the detector are discussed here in detail. The origin of selective and fast response has also been discussed with support of existing theoretical models. Accordingly, electron hole pairs created by the UV radiation at the p-type Si and n-type ZnO nanowire junctions and separated by junction barrier get immediately recombined to enhance the photoconductivity due to applied electric field. The barrier potential and the junction capacitor could be tuned and depend on the size of the nanowires and the band bending on surfaces of nanowires due to heterojunction. The steady state response of the detector studied by keeping it in a reverse biased condition and exposing to UV radiation shows very high stability of the device (around 4% decrease in the photocurrent in over five weeks for −3 V biasing and ∼50 μW/cm2 UV power). Other potential applications for this UV detector are in the field of medicine and in spectroscopy where UV sources are being used. It could also be used to take protective measures for eye damages and skin cancer by monitoring UV radiation levels.
doi_str_mv 10.1016/j.sna.2018.06.040
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2116404456</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S092442471731868X</els_id><sourcerecordid>2116404456</sourcerecordid><originalsourceid>FETCH-LOGICAL-c325t-d6e583ae5c1aca885662b55ccce996a8674d4921ebd168e352ce65be6bd4d4843</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKs_wNuC593me7N4kuIXVHrQevASsslUs9ikJlvBf29KPXsY5jDvMzM8CF0S3BBM5GxocjANxUQ1WDaY4yM0IaplNcOyO0YT3FFec8rbU3SW84AxZqxtJ-gp1G9hOdvWz776gBFSHHbBjj6GKpgQnY8OctWbDK7KEHJM1brUJgY_xuTDe7V6rZJx3uyZc3SyNp8ZLv76FK3ubl_mD_Vief84v1nUllEx1k6CUMyAsMRYo5SQkvZCWGuh66RRsuWOd5RA74hUwAS1IEUPsndloDiboqvD3m2KXzvIox7iLoVyUlNCJMecC1lS5JCyKeacYK23yW9M-tEE6701PehiTe-taSx1sVaY6wMD5f1vD0ln6yFYcD6BHbWL_h_6F-AEdTk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2116404456</pqid></control><display><type>article</type><title>n-ZnO/p-Si heterojunction nanodiodes based sensor for monitoring UV radiation</title><source>Access via ScienceDirect (Elsevier)</source><creator>Sahare, P.D. ; Kumar, Sudhisht ; Kumar, Surender ; Singh, Fouran</creator><creatorcontrib>Sahare, P.D. ; Kumar, Sudhisht ; Kumar, Surender ; Singh, Fouran</creatorcontrib><description>[Display omitted] •Vertically aligned c-axis oriented n-ZnO nanorod array was grown on the p-Si substrate using Co-doped ZnO compact targets.•UV sensor device was successfully fabricated using n-ZnO/p-Si heterojunction nanodiodes array.•IV-characteristics on illumination of UV radiation show good and fast response.•Transient response of the device show good stability and very fast temporal response.•Spectral response of the responsivity (Rλ) and quantum efficiency (η) for the UV sensor show sharp decline in visible range ZnO nanowire array on p-type Si (100) substrate based PN-heterojunction photodiode type UV radiation detector was fabricated using rf-magnetron sputtering. The detector exhibited visible blindness below the band gap of the material (3.2 eV) and ultra-fast response for ultraviolet radiation with a peak responsivity at around 380 nm. The temporal photocurrent response of the detector was measured to be 0.1 s which is much better than a commercially available UV-detector. The design, construction and working of the detector are discussed here in detail. The origin of selective and fast response has also been discussed with support of existing theoretical models. Accordingly, electron hole pairs created by the UV radiation at the p-type Si and n-type ZnO nanowire junctions and separated by junction barrier get immediately recombined to enhance the photoconductivity due to applied electric field. The barrier potential and the junction capacitor could be tuned and depend on the size of the nanowires and the band bending on surfaces of nanowires due to heterojunction. The steady state response of the detector studied by keeping it in a reverse biased condition and exposing to UV radiation shows very high stability of the device (around 4% decrease in the photocurrent in over five weeks for −3 V biasing and ∼50 μW/cm2 UV power). Other potential applications for this UV detector are in the field of medicine and in spectroscopy where UV sources are being used. It could also be used to take protective measures for eye damages and skin cancer by monitoring UV radiation levels.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2018.06.040</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Band bending ; Blindness ; Diodes ; Electrical junctions ; Heterojunctions ; Holes (electron deficiencies) ; Magnetron sputtering ; Monitoring ; n-ZnO/p-Si heterojunction ; Nanowires ; Photoconductivity ; Photodiodes ; Photoelectric effect ; Photoelectric emission ; Radiation damage ; Radiation detectors ; Radiation measurement ; Rf-magnetron sputtering ; Sensor arrays ; Sensors ; Silicon substrates ; Ultraviolet radiation ; UV detector ; Zinc oxide ; ZnO nanowires array</subject><ispartof>Sensors and actuators. A. Physical., 2018-08, Vol.279, p.351-360</ispartof><rights>2018 Elsevier B.V.</rights><rights>Copyright Elsevier BV Aug 15, 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-d6e583ae5c1aca885662b55ccce996a8674d4921ebd168e352ce65be6bd4d4843</citedby><cites>FETCH-LOGICAL-c325t-d6e583ae5c1aca885662b55ccce996a8674d4921ebd168e352ce65be6bd4d4843</cites><orcidid>0000-0003-3103-3641</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sna.2018.06.040$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Sahare, P.D.</creatorcontrib><creatorcontrib>Kumar, Sudhisht</creatorcontrib><creatorcontrib>Kumar, Surender</creatorcontrib><creatorcontrib>Singh, Fouran</creatorcontrib><title>n-ZnO/p-Si heterojunction nanodiodes based sensor for monitoring UV radiation</title><title>Sensors and actuators. A. Physical.</title><description>[Display omitted] •Vertically aligned c-axis oriented n-ZnO nanorod array was grown on the p-Si substrate using Co-doped ZnO compact targets.•UV sensor device was successfully fabricated using n-ZnO/p-Si heterojunction nanodiodes array.•IV-characteristics on illumination of UV radiation show good and fast response.•Transient response of the device show good stability and very fast temporal response.•Spectral response of the responsivity (Rλ) and quantum efficiency (η) for the UV sensor show sharp decline in visible range ZnO nanowire array on p-type Si (100) substrate based PN-heterojunction photodiode type UV radiation detector was fabricated using rf-magnetron sputtering. The detector exhibited visible blindness below the band gap of the material (3.2 eV) and ultra-fast response for ultraviolet radiation with a peak responsivity at around 380 nm. The temporal photocurrent response of the detector was measured to be 0.1 s which is much better than a commercially available UV-detector. The design, construction and working of the detector are discussed here in detail. The origin of selective and fast response has also been discussed with support of existing theoretical models. Accordingly, electron hole pairs created by the UV radiation at the p-type Si and n-type ZnO nanowire junctions and separated by junction barrier get immediately recombined to enhance the photoconductivity due to applied electric field. The barrier potential and the junction capacitor could be tuned and depend on the size of the nanowires and the band bending on surfaces of nanowires due to heterojunction. The steady state response of the detector studied by keeping it in a reverse biased condition and exposing to UV radiation shows very high stability of the device (around 4% decrease in the photocurrent in over five weeks for −3 V biasing and ∼50 μW/cm2 UV power). Other potential applications for this UV detector are in the field of medicine and in spectroscopy where UV sources are being used. It could also be used to take protective measures for eye damages and skin cancer by monitoring UV radiation levels.</description><subject>Band bending</subject><subject>Blindness</subject><subject>Diodes</subject><subject>Electrical junctions</subject><subject>Heterojunctions</subject><subject>Holes (electron deficiencies)</subject><subject>Magnetron sputtering</subject><subject>Monitoring</subject><subject>n-ZnO/p-Si heterojunction</subject><subject>Nanowires</subject><subject>Photoconductivity</subject><subject>Photodiodes</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Radiation damage</subject><subject>Radiation detectors</subject><subject>Radiation measurement</subject><subject>Rf-magnetron sputtering</subject><subject>Sensor arrays</subject><subject>Sensors</subject><subject>Silicon substrates</subject><subject>Ultraviolet radiation</subject><subject>UV detector</subject><subject>Zinc oxide</subject><subject>ZnO nanowires array</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wNuC593me7N4kuIXVHrQevASsslUs9ikJlvBf29KPXsY5jDvMzM8CF0S3BBM5GxocjANxUQ1WDaY4yM0IaplNcOyO0YT3FFec8rbU3SW84AxZqxtJ-gp1G9hOdvWz776gBFSHHbBjj6GKpgQnY8OctWbDK7KEHJM1brUJgY_xuTDe7V6rZJx3uyZc3SyNp8ZLv76FK3ubl_mD_Vief84v1nUllEx1k6CUMyAsMRYo5SQkvZCWGuh66RRsuWOd5RA74hUwAS1IEUPsndloDiboqvD3m2KXzvIox7iLoVyUlNCJMecC1lS5JCyKeacYK23yW9M-tEE6701PehiTe-taSx1sVaY6wMD5f1vD0ln6yFYcD6BHbWL_h_6F-AEdTk</recordid><startdate>20180815</startdate><enddate>20180815</enddate><creator>Sahare, P.D.</creator><creator>Kumar, Sudhisht</creator><creator>Kumar, Surender</creator><creator>Singh, Fouran</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3103-3641</orcidid></search><sort><creationdate>20180815</creationdate><title>n-ZnO/p-Si heterojunction nanodiodes based sensor for monitoring UV radiation</title><author>Sahare, P.D. ; Kumar, Sudhisht ; Kumar, Surender ; Singh, Fouran</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-d6e583ae5c1aca885662b55ccce996a8674d4921ebd168e352ce65be6bd4d4843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Band bending</topic><topic>Blindness</topic><topic>Diodes</topic><topic>Electrical junctions</topic><topic>Heterojunctions</topic><topic>Holes (electron deficiencies)</topic><topic>Magnetron sputtering</topic><topic>Monitoring</topic><topic>n-ZnO/p-Si heterojunction</topic><topic>Nanowires</topic><topic>Photoconductivity</topic><topic>Photodiodes</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Radiation damage</topic><topic>Radiation detectors</topic><topic>Radiation measurement</topic><topic>Rf-magnetron sputtering</topic><topic>Sensor arrays</topic><topic>Sensors</topic><topic>Silicon substrates</topic><topic>Ultraviolet radiation</topic><topic>UV detector</topic><topic>Zinc oxide</topic><topic>ZnO nanowires array</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sahare, P.D.</creatorcontrib><creatorcontrib>Kumar, Sudhisht</creatorcontrib><creatorcontrib>Kumar, Surender</creatorcontrib><creatorcontrib>Singh, Fouran</creatorcontrib><collection>CrossRef</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sahare, P.D.</au><au>Kumar, Sudhisht</au><au>Kumar, Surender</au><au>Singh, Fouran</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>n-ZnO/p-Si heterojunction nanodiodes based sensor for monitoring UV radiation</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2018-08-15</date><risdate>2018</risdate><volume>279</volume><spage>351</spage><epage>360</epage><pages>351-360</pages><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>[Display omitted] •Vertically aligned c-axis oriented n-ZnO nanorod array was grown on the p-Si substrate using Co-doped ZnO compact targets.•UV sensor device was successfully fabricated using n-ZnO/p-Si heterojunction nanodiodes array.•IV-characteristics on illumination of UV radiation show good and fast response.•Transient response of the device show good stability and very fast temporal response.•Spectral response of the responsivity (Rλ) and quantum efficiency (η) for the UV sensor show sharp decline in visible range ZnO nanowire array on p-type Si (100) substrate based PN-heterojunction photodiode type UV radiation detector was fabricated using rf-magnetron sputtering. The detector exhibited visible blindness below the band gap of the material (3.2 eV) and ultra-fast response for ultraviolet radiation with a peak responsivity at around 380 nm. The temporal photocurrent response of the detector was measured to be 0.1 s which is much better than a commercially available UV-detector. The design, construction and working of the detector are discussed here in detail. The origin of selective and fast response has also been discussed with support of existing theoretical models. Accordingly, electron hole pairs created by the UV radiation at the p-type Si and n-type ZnO nanowire junctions and separated by junction barrier get immediately recombined to enhance the photoconductivity due to applied electric field. The barrier potential and the junction capacitor could be tuned and depend on the size of the nanowires and the band bending on surfaces of nanowires due to heterojunction. The steady state response of the detector studied by keeping it in a reverse biased condition and exposing to UV radiation shows very high stability of the device (around 4% decrease in the photocurrent in over five weeks for −3 V biasing and ∼50 μW/cm2 UV power). Other potential applications for this UV detector are in the field of medicine and in spectroscopy where UV sources are being used. It could also be used to take protective measures for eye damages and skin cancer by monitoring UV radiation levels.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2018.06.040</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-3103-3641</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0924-4247
ispartof Sensors and actuators. A. Physical., 2018-08, Vol.279, p.351-360
issn 0924-4247
1873-3069
language eng
recordid cdi_proquest_journals_2116404456
source Access via ScienceDirect (Elsevier)
subjects Band bending
Blindness
Diodes
Electrical junctions
Heterojunctions
Holes (electron deficiencies)
Magnetron sputtering
Monitoring
n-ZnO/p-Si heterojunction
Nanowires
Photoconductivity
Photodiodes
Photoelectric effect
Photoelectric emission
Radiation damage
Radiation detectors
Radiation measurement
Rf-magnetron sputtering
Sensor arrays
Sensors
Silicon substrates
Ultraviolet radiation
UV detector
Zinc oxide
ZnO nanowires array
title n-ZnO/p-Si heterojunction nanodiodes based sensor for monitoring UV radiation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T08%3A28%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=n-ZnO/p-Si%20heterojunction%20nanodiodes%20based%20sensor%20for%20monitoring%20UV%20radiation&rft.jtitle=Sensors%20and%20actuators.%20A.%20Physical.&rft.au=Sahare,%20P.D.&rft.date=2018-08-15&rft.volume=279&rft.spage=351&rft.epage=360&rft.pages=351-360&rft.issn=0924-4247&rft.eissn=1873-3069&rft_id=info:doi/10.1016/j.sna.2018.06.040&rft_dat=%3Cproquest_cross%3E2116404456%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2116404456&rft_id=info:pmid/&rft_els_id=S092442471731868X&rfr_iscdi=true