Uniform coating of Ta2O5 on vertically aligned substrate: A prelude to forced flow atomic layer deposition

Uniform tantalum oxide thin films, with a growth rate of 0.6 Å/cycle, were fabricated on vertically aligned, 10 cm-long, silicon substrates using an innovative atomic layer deposition (ALD) design. The ALD system, with a reaction chamber depth of 13.3 cm and 18 vertical enclosed channels (inner diam...

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Veröffentlicht in:	Review of scientific instruments 2017-06, Vol.88 (6), p.065103-065103
Hauptverfasser:	Mishra, Mrinalini, Kei, Chi-Chung, Yu, Yu-Hsuan, Liu, Wei-Szu, Perng, Tsong-Pyng
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer epitaxy Channels Design modifications Scientific apparatus & instruments Silicon substrates Silicon wafers Tantalum oxides Thin films
Online-Zugang:	Volltext
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