Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV
We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral range between 0.6 eV and 6 eV. They have been determined by combined spectroscopic ellipsometry, optical retar...
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Veröffentlicht in: | Journal of applied physics 2017-07, Vol.122 (4) |
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creator | Shokhovets, S. Kirste, L. Leach, J. H. Krischok, S. Himmerlich, M. |
description | We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral range between 0.6 eV and 6 eV. They have been determined by combined spectroscopic ellipsometry, optical retardation, and transmission measurements on a series of m- and c-plane bulk substrates prepared from crystals grown by hydride vapor phase epitaxy. The accuracy of the derived DFs is estimated by investigation of the role of mosaicity-related crystal imperfections, self-consistency test based on a Kramers-Kronig analysis, and examination of the influence of kind of overlayer. We also briefly discuss optical properties of a highly defective near-surface layer of GaN crystals introduced by their mechanical polishing. |
doi_str_mv | 10.1063/1.4995596 |
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H. ; Krischok, S. ; Himmerlich, M.</creator><creatorcontrib>Shokhovets, S. ; Kirste, L. ; Leach, J. H. ; Krischok, S. ; Himmerlich, M.</creatorcontrib><description>We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral range between 0.6 eV and 6 eV. They have been determined by combined spectroscopic ellipsometry, optical retardation, and transmission measurements on a series of m- and c-plane bulk substrates prepared from crystals grown by hydride vapor phase epitaxy. The accuracy of the derived DFs is estimated by investigation of the role of mosaicity-related crystal imperfections, self-consistency test based on a Kramers-Kronig analysis, and examination of the influence of kind of overlayer. We also briefly discuss optical properties of a highly defective near-surface layer of GaN crystals introduced by their mechanical polishing.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4995596</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorptivity ; Anisotropy ; Applied physics ; Birefringence ; Consistency tests ; Crystal defects ; Crystal growth ; Crystals ; Dichroism ; Epitaxial growth ; Gallium nitrides ; Mechanical polishing ; Optical properties ; Refractivity ; Spectroellipsometry ; Substrates ; Surface layers ; Vapor phase epitaxy ; Vapor phases ; Wurtzite</subject><ispartof>Journal of applied physics, 2017-07, Vol.122 (4)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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H.</creatorcontrib><creatorcontrib>Krischok, S.</creatorcontrib><creatorcontrib>Himmerlich, M.</creatorcontrib><title>Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV</title><title>Journal of applied physics</title><description>We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral range between 0.6 eV and 6 eV. They have been determined by combined spectroscopic ellipsometry, optical retardation, and transmission measurements on a series of m- and c-plane bulk substrates prepared from crystals grown by hydride vapor phase epitaxy. The accuracy of the derived DFs is estimated by investigation of the role of mosaicity-related crystal imperfections, self-consistency test based on a Kramers-Kronig analysis, and examination of the influence of kind of overlayer. We also briefly discuss optical properties of a highly defective near-surface layer of GaN crystals introduced by their mechanical polishing.</description><subject>Absorptivity</subject><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Birefringence</subject><subject>Consistency tests</subject><subject>Crystal defects</subject><subject>Crystal growth</subject><subject>Crystals</subject><subject>Dichroism</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>Mechanical polishing</subject><subject>Optical properties</subject><subject>Refractivity</subject><subject>Spectroellipsometry</subject><subject>Substrates</subject><subject>Surface layers</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phases</subject><subject>Wurtzite</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp90MFKAzEQBuAgCtbqwTcIeFK6NdlssptjKVqFohf1GpJsoiltsiapRZ_erRU9CJ5mBj5mmB-AU4zGGDFyiccV55RytgcGGDW8qClF-2CAUImLhtf8EByltEAI44bwAdAT71LIMXROw9Blp-US6uBTlj6nEVQuGhudfzZemxGUvoWt0y8xuLSCwcLNOuYPlw2cyTuoTN4Y4yEaM2ievvC2OQYHVi6TOfmuQ_B4ffUwvSnm97Pb6WReaMJJLiQiNTOtUVVtaKuVbvsBV7ZGmBHLjNWNUhVlChlia1JSXlPTqFLJpmUUSTIEZ7u9XQyva5OyWIR19P1JUWLMEEdVxXp1vlM6hpT670QX3UrGd4GR2GYosPjOsLcXO5u0yzK74H_wW4i_UHSt_Q__3fwJBzB_3w</recordid><startdate>20170728</startdate><enddate>20170728</enddate><creator>Shokhovets, S.</creator><creator>Kirste, L.</creator><creator>Leach, J. 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H. ; Krischok, S. ; Himmerlich, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-a0376edeb47e5dcbcdede14f70163f6efc8bb456b0e3f7325975e8b2ba8d650a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Absorptivity</topic><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Birefringence</topic><topic>Consistency tests</topic><topic>Crystal defects</topic><topic>Crystal growth</topic><topic>Crystals</topic><topic>Dichroism</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>Mechanical polishing</topic><topic>Optical properties</topic><topic>Refractivity</topic><topic>Spectroellipsometry</topic><topic>Substrates</topic><topic>Surface layers</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phases</topic><topic>Wurtzite</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shokhovets, S.</creatorcontrib><creatorcontrib>Kirste, L.</creatorcontrib><creatorcontrib>Leach, J. H.</creatorcontrib><creatorcontrib>Krischok, S.</creatorcontrib><creatorcontrib>Himmerlich, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shokhovets, S.</au><au>Kirste, L.</au><au>Leach, J. H.</au><au>Krischok, S.</au><au>Himmerlich, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV</atitle><jtitle>Journal of applied physics</jtitle><date>2017-07-28</date><risdate>2017</risdate><volume>122</volume><issue>4</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral range between 0.6 eV and 6 eV. They have been determined by combined spectroscopic ellipsometry, optical retardation, and transmission measurements on a series of m- and c-plane bulk substrates prepared from crystals grown by hydride vapor phase epitaxy. The accuracy of the derived DFs is estimated by investigation of the role of mosaicity-related crystal imperfections, self-consistency test based on a Kramers-Kronig analysis, and examination of the influence of kind of overlayer. We also briefly discuss optical properties of a highly defective near-surface layer of GaN crystals introduced by their mechanical polishing.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4995596</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0002-3072-7273</orcidid></addata></record> |
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subjects | Absorptivity Anisotropy Applied physics Birefringence Consistency tests Crystal defects Crystal growth Crystals Dichroism Epitaxial growth Gallium nitrides Mechanical polishing Optical properties Refractivity Spectroellipsometry Substrates Surface layers Vapor phase epitaxy Vapor phases Wurtzite |
title | Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV |
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