Interaction of accelerated argon cluster ions with a silicon dioxide surface
Gas cluster ion beams bring new opportunities for diagnostics and modification of materials surfaces. In this work impact of argon clusters on silicon dioxide has been studied by molecular dynamics simulations and experimentally. We have obtained dependencies of crater size and the SiO2 sputtering y...
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| creator | Korobeishchikov, N. G. Stishenko, P. V. Popenko, Y. A. Roenko, M. A. Nikolaev, I. V. |
| description | Gas cluster ion beams bring new opportunities for diagnostics and modification of materials surfaces. In this work impact of argon clusters on silicon dioxide has been studied by molecular dynamics simulations and experimentally. We have obtained dependencies of crater size and the SiO2 sputtering yield on cluster size and specific energy. High reactive selectivity of sputtered products has been revealed for a high specific energy of clusters. It can cause modification of the target surface layer composition in case of long time irradiation. Peculiarities of experimental and computational data matching have been discussed. |
| doi_str_mv | 10.1063/1.4998884 |
| format | Conference Proceeding |
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G. ; Stishenko, P. V. ; Popenko, Y. A. ; Roenko, M. A. ; Nikolaev, I. V.</creator><contributor>Likholobov, Vladimir A. ; Yusha, Vladimir L. ; Myshlyavtsev, Alexander V.</contributor><creatorcontrib>Korobeishchikov, N. G. ; Stishenko, P. V. ; Popenko, Y. A. ; Roenko, M. A. ; Nikolaev, I. V. ; Likholobov, Vladimir A. ; Yusha, Vladimir L. ; Myshlyavtsev, Alexander V.</creatorcontrib><description>Gas cluster ion beams bring new opportunities for diagnostics and modification of materials surfaces. In this work impact of argon clusters on silicon dioxide has been studied by molecular dynamics simulations and experimentally. We have obtained dependencies of crater size and the SiO2 sputtering yield on cluster size and specific energy. High reactive selectivity of sputtered products has been revealed for a high specific energy of clusters. It can cause modification of the target surface layer composition in case of long time irradiation. 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V.</creatorcontrib><title>Interaction of accelerated argon cluster ions with a silicon dioxide surface</title><title>AIP conference proceedings</title><description>Gas cluster ion beams bring new opportunities for diagnostics and modification of materials surfaces. In this work impact of argon clusters on silicon dioxide has been studied by molecular dynamics simulations and experimentally. We have obtained dependencies of crater size and the SiO2 sputtering yield on cluster size and specific energy. High reactive selectivity of sputtered products has been revealed for a high specific energy of clusters. It can cause modification of the target surface layer composition in case of long time irradiation. Peculiarities of experimental and computational data matching have been discussed.</description><subject>Argon</subject><subject>Clusters</subject><subject>Computer simulation</subject><subject>Ion beams</subject><subject>Molecular dynamics</subject><subject>Silicon dioxide</subject><subject>Surface layers</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2017</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kE9LAzEQxYMoWKsHv0HAm7A1k2SzyVGK1kLBi4K3kE2ymrJ2a5L1z7c3pQVvnoZ58-MN7yF0CWQGRLAbmHGlpJT8CE2grqFqBIhjNCFE8Ypy9nKKzlJaE0JV08gJWi032Udjcxg2eOiwsdb3RcjeYRNfi2j7MRUEFyDhr5DfsMEp9MGWmwvDd3AepzF2xvpzdNKZPvmLw5yi5_u7p_lDtXpcLOe3q8pSxXJVcymIEKJ1klrjlPJALJjWlr1pQHLruW9pRz0jgnjedK6WAmrFWuNr5dkUXe19t3H4GH3Kej2McVNeagogiAQCpFDXeyrZkM0uoN7G8G7ijwaid21p0Ie2_oM_h_gH6q3r2C9sH2r3</recordid><startdate>20170823</startdate><enddate>20170823</enddate><creator>Korobeishchikov, N. 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In this work impact of argon clusters on silicon dioxide has been studied by molecular dynamics simulations and experimentally. We have obtained dependencies of crater size and the SiO2 sputtering yield on cluster size and specific energy. High reactive selectivity of sputtered products has been revealed for a high specific energy of clusters. It can cause modification of the target surface layer composition in case of long time irradiation. Peculiarities of experimental and computational data matching have been discussed.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4998884</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2017, Vol.1876 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_proquest_journals_2116081010 |
| source | AIP Journals Complete |
| subjects | Argon Clusters Computer simulation Ion beams Molecular dynamics Silicon dioxide Surface layers |
| title | Interaction of accelerated argon cluster ions with a silicon dioxide surface |
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