Nonlinear physics of THz sources: Duality theory in nonequilibrium nanodevice physics

There is a formal correspondence or duality in the analytical theories of self-oscillation in resonant tunneling nanostructures (RTN’s) with conventional (type-I) and with staggered (type-II) alignments of the heterostructure energy-band gaps. Two entirely difflerent physical models for type-I and t...

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Hauptverfasser:	Buot, F. A., Montecillo, R., Nacar, M. D., Otadoy, R. E. S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Computer simulation Current voltage characteristics Energy gap Gallium arsenide Heterostructures Limit cycle oscillations Nanotechnology devices Nonlinear equations Resonant tunneling
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creator	Buot, F. A. Montecillo, R. Nacar, M. D. Otadoy, R. E. S.
description	There is a formal correspondence or duality in the analytical theories of self-oscillation in resonant tunneling nanostructures (RTN’s) with conventional (type-I) and with staggered (type-II) alignments of the heterostructure energy-band gaps. Two entirely difflerent physical models for type-I and type-II RTN’s were introduced and described by a unifying set of coupled nonlinear-rate equations. These coupled equations were solved for the limit cycle solution. For type-I RTN, the limit cycle predictions in the plateau agrees with experiments and simulations of AlGaAs/GaAs type I RTN. For type II RTN, the limit-cycle oscillation time-averaged results agree with the measured current-voltage (I-V) characteristic of AlGaSb/InAs/AlGaSb type-II RTN.
doi_str_mv	10.1063/1.4996520
format	Conference Proceeding
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A. ; Montecillo, R. ; Nacar, M. D. ; Otadoy, R. E. S.</creator><contributor>Soriano, Maricor N. ; Esguerra, Jose Perico H. ; Villagonzalo, Cristine D. ; Bornales, Jinky B. ; Carpio-Bernido, M. Victoria ; Bernido, Christopher C.</contributor><creatorcontrib>Buot, F. A. ; Montecillo, R. ; Nacar, M. D. ; Otadoy, R. E. S. ; Soriano, Maricor N. ; Esguerra, Jose Perico H. ; Villagonzalo, Cristine D. ; Bornales, Jinky B. ; Carpio-Bernido, M. Victoria ; Bernido, Christopher C.</creatorcontrib><description>There is a formal correspondence or duality in the analytical theories of self-oscillation in resonant tunneling nanostructures (RTN’s) with conventional (type-I) and with staggered (type-II) alignments of the heterostructure energy-band gaps. Two entirely difflerent physical models for type-I and type-II RTN’s were introduced and described by a unifying set of coupled nonlinear-rate equations. These coupled equations were solved for the limit cycle solution. 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D.</creatorcontrib><creatorcontrib>Otadoy, R. E. S.</creatorcontrib><title>Nonlinear physics of THz sources: Duality theory in nonequilibrium nanodevice physics</title><title>AIP Conference Proceedings</title><description>There is a formal correspondence or duality in the analytical theories of self-oscillation in resonant tunneling nanostructures (RTN’s) with conventional (type-I) and with staggered (type-II) alignments of the heterostructure energy-band gaps. Two entirely difflerent physical models for type-I and type-II RTN’s were introduced and described by a unifying set of coupled nonlinear-rate equations. These coupled equations were solved for the limit cycle solution. For type-I RTN, the limit cycle predictions in the plateau agrees with experiments and simulations of AlGaAs/GaAs type I RTN. For type II RTN, the limit-cycle oscillation time-averaged results agree with the measured current-voltage (I-V) characteristic of AlGaSb/InAs/AlGaSb type-II RTN.</description><subject>Computer simulation</subject><subject>Current voltage characteristics</subject><subject>Energy gap</subject><subject>Gallium arsenide</subject><subject>Heterostructures</subject><subject>Limit cycle oscillations</subject><subject>Nanotechnology devices</subject><subject>Nonlinear equations</subject><subject>Resonant tunneling</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2017</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqF0M1LwzAYBvAgCs7pwf8g4E3ozFfTxJvMjwlDLxt4C2masowu6ZJWqH-9G5t409N7-fE8Lw8A1xhNMOL0Dk-YlDwn6ASMcJ7jrOCYn4IRQpJlhNGPc3CR0hohIotCjMDyLfjGeasjbFdDcibBUMPF7Aum0Edj0z187HXjugF2KxviAJ2HPni77V3jyuj6DfTah8p-OmN_Mi7BWa2bZK-OdwyWz0-L6Sybv7-8Th_mWUsx7zJeaM5zgwQjtORa0LISuK5qJisuSlEYza0UmJMSa8GEIMhghmVNi5zlhgg6BjeH3DaGbW9Tp9a7r_2uUhGMORIol_xfVUjB9ur2oJJxne5c8KqNbqPjoDBS-3EVVsdx_8KfIf5C1VY1_QbdUnl_</recordid><startdate>20170825</startdate><enddate>20170825</enddate><creator>Buot, F. 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subjects	Computer simulation Current voltage characteristics Energy gap Gallium arsenide Heterostructures Limit cycle oscillations Nanotechnology devices Nonlinear equations Resonant tunneling
title	Nonlinear physics of THz sources: Duality theory in nonequilibrium nanodevice physics
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