Through-membrane electron-beam lithography for ultrathin membrane applications
We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavit...
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| Veröffentlicht in: | Applied physics letters 2017-08, Vol.111 (6) |
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| container_title | Applied physics letters |
| container_volume | 111 |
| creator | Neklyudova, M. Erdamar, A. K. Vicarelli, L. Heerema, S. J. Rehfeldt, T. Pandraud, G. Kolahdouz, Z. Dekker, C. Zandbergen, H. W. |
| description | We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices. |
| doi_str_mv | 10.1063/1.4986991 |
| format | Article |
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| ispartof | Applied physics letters, 2017-08, Vol.111 (6) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Chips (electronics) Electromigration Electron beam lithography Graphene Metal films Porosity Thin films Transmission electron microscopy |
| title | Through-membrane electron-beam lithography for ultrathin membrane applications |
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