Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TF...

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Veröffentlicht in:	Applied physics letters 2017-08, Vol.111 (6)
Hauptverfasser:	Han, Ki-Lim, Ok, Kyung-Chul, Cho, Hyeon-Su, Oh, Saeroonter, Park, Jin-Seong
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied physics Buffer layers Carrier density Hydrogen Indium gallium zinc oxide Multilayers Quantitative analysis Semiconductor devices Silicon dioxide Stability Substrates Thin film transistors Transistors
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