Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure
A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was comprehensively characterized. Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribu...
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| Veröffentlicht in: | Journal of applied physics 2017-09, Vol.122 (12) |
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| container_title | Journal of applied physics |
| container_volume | 122 |
| creator | Du, Wei Ghetmiri, Seyed Amir Margetis, Joe Al-Kabi, Sattar Zhou, Yiyin Liu, Jifeng Sun, Greg Soref, Richard A. Tolle, John Li, Baohua Mortazavi, Mansour Yu, Shui-Qing |
| description | A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was comprehensively characterized. Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified. |
| doi_str_mv | 10.1063/1.4986341 |
| format | Article |
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Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4986341</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carrier recombination ; Optical pumping ; Optical transition ; Photoluminescence ; Quantum wells ; Temperature dependence ; Thin films</subject><ispartof>Journal of applied physics, 2017-09, Vol.122 (12)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified.</description><subject>Applied physics</subject><subject>Carrier recombination</subject><subject>Optical pumping</subject><subject>Optical transition</subject><subject>Photoluminescence</subject><subject>Quantum wells</subject><subject>Temperature dependence</subject><subject>Thin films</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLAzEQhYMoWKsH_0HAk8K2k812NzlK0VooeKhevIR0Nykp2-w2yVb896bdogfBy8zw-HjDewjdEhgRyOmYjDLOcpqRMzQgwHhSTCZwjgYAKUkYL_gluvJ-A0AIo3yAPuZ2r3wwaxlMY3GjcdMGU8oaByetNwfVY2OxxEszU0s7Po7-xt7Yda3wrpM2dFv8qeoa--C6MnROXaMLLWuvbk57iN6fn96mL8nidTafPi6SknIakqygFFSlgfBqAoxVkmkaM-RMK6CEraAEwsoVjcqKqUqlecpzmSnNNKuopEN01_u2rtl1MYzYNJ2z8aVICcljK1BkkbrvqdI13julRevMVrovQUAcqhNEnKqL7EPP-tKEYzE_8L5xv6BoK_0f_Nf5GzDnfKo</recordid><startdate>20170928</startdate><enddate>20170928</enddate><creator>Du, Wei</creator><creator>Ghetmiri, Seyed Amir</creator><creator>Margetis, Joe</creator><creator>Al-Kabi, Sattar</creator><creator>Zhou, Yiyin</creator><creator>Liu, Jifeng</creator><creator>Sun, Greg</creator><creator>Soref, Richard A.</creator><creator>Tolle, John</creator><creator>Li, Baohua</creator><creator>Mortazavi, Mansour</creator><creator>Yu, Shui-Qing</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6354-234X</orcidid></search><sort><creationdate>20170928</creationdate><title>Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure</title><author>Du, Wei ; Ghetmiri, Seyed Amir ; Margetis, Joe ; Al-Kabi, Sattar ; Zhou, Yiyin ; Liu, Jifeng ; Sun, Greg ; Soref, Richard A. ; Tolle, John ; Li, Baohua ; Mortazavi, Mansour ; Yu, Shui-Qing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-47330edf019d5088da8f398668fe0318b0c018cb3668b8ede26296a4ef8f8d3a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Carrier recombination</topic><topic>Optical pumping</topic><topic>Optical transition</topic><topic>Photoluminescence</topic><topic>Quantum wells</topic><topic>Temperature dependence</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Du, Wei</creatorcontrib><creatorcontrib>Ghetmiri, Seyed Amir</creatorcontrib><creatorcontrib>Margetis, Joe</creatorcontrib><creatorcontrib>Al-Kabi, Sattar</creatorcontrib><creatorcontrib>Zhou, Yiyin</creatorcontrib><creatorcontrib>Liu, Jifeng</creatorcontrib><creatorcontrib>Sun, Greg</creatorcontrib><creatorcontrib>Soref, Richard A.</creatorcontrib><creatorcontrib>Tolle, John</creatorcontrib><creatorcontrib>Li, Baohua</creatorcontrib><creatorcontrib>Mortazavi, Mansour</creatorcontrib><creatorcontrib>Yu, Shui-Qing</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Du, Wei</au><au>Ghetmiri, Seyed Amir</au><au>Margetis, Joe</au><au>Al-Kabi, Sattar</au><au>Zhou, Yiyin</au><au>Liu, Jifeng</au><au>Sun, Greg</au><au>Soref, Richard A.</au><au>Tolle, John</au><au>Li, Baohua</au><au>Mortazavi, Mansour</au><au>Yu, Shui-Qing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure</atitle><jtitle>Journal of applied physics</jtitle><date>2017-09-28</date><risdate>2017</risdate><volume>122</volume><issue>12</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A SiGeSn/GeSn/SiGeSn single quantum well structure featuring type-I band alignment was comprehensively characterized. Three pump lasers with different penetration depths and photon energies were used to pinpoint the optical transition characteristics of the sample. The carrier generation, redistribution, and recombination under each pumping condition were analyzed in detail. By comparing the temperature-dependent photoluminescence spectra of the GeSn quantum well with that of SiGeSn and GeSn thin film samples possessing similar Si and Sn compositions, the optical transition mechanism was clearly identified.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4986341</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-6354-234X</orcidid></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2017-09, Vol.122 (12) |
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| language | eng |
| recordid | cdi_proquest_journals_2116063074 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Carrier recombination Optical pumping Optical transition Photoluminescence Quantum wells Temperature dependence Thin films |
| title | Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure |
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