Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakag...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2017-09, Vol.111 (12)
Hauptverfasser:	Sang, Liwen, Ren, Bing, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Tanaka, Atsushi, Cho, Yujin, Harada, Yoshitomo, Nabatame, Toshihide, Sekiguchi, Takashi, Usami, Shigeyoshi, Honda, Yoshio, Amano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Current voltage characteristics Dislocations Emission analysis Emission microscopy Failure analysis Gallium nitrides Leakage current Photon emission Pits Schottky diodes Substrates
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!