Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakag...
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| Veröffentlicht in: | Applied physics letters 2017-09, Vol.111 (12) |
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| container_title | Applied physics letters |
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| creator | Sang, Liwen Ren, Bing Sumiya, Masatomo Liao, Meiyong Koide, Yasuo Tanaka, Atsushi Cho, Yujin Harada, Yoshitomo Nabatame, Toshihide Sekiguchi, Takashi Usami, Shigeyoshi Honda, Yoshio Amano, Hiroshi |
| description | Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics. |
| doi_str_mv | 10.1063/1.4994627 |
| format | Article |
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The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4994627</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Current voltage characteristics ; Dislocations ; Emission analysis ; Emission microscopy ; Failure analysis ; Gallium nitrides ; Leakage current ; Photon emission ; Pits ; Schottky diodes ; Substrates</subject><ispartof>Applied physics letters, 2017-09, Vol.111 (12)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.</description><subject>Applied physics</subject><subject>Current voltage characteristics</subject><subject>Dislocations</subject><subject>Emission analysis</subject><subject>Emission microscopy</subject><subject>Failure analysis</subject><subject>Gallium nitrides</subject><subject>Leakage current</subject><subject>Photon emission</subject><subject>Pits</subject><subject>Schottky diodes</subject><subject>Substrates</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0EFLwzAYBuAgCs7pwX8Q8KSQma9pkvYow83B0IPuHNI0ddlqU5NssH9vZQPvnl4-eHg_eBG6BToBKtgjTPKyzEUmz9AIqJSEARTnaEQpZUSUHC7RVYyb4eQZYyO0WnQuOd3i1uqt_rTY7EKwXcK9TuuIXYfT2uK9DckZ3ZJ06C2e61fiOzIEfjdrn9L2gCsdgrMB187XNl6ji0a30d6ccoxWs-eP6QtZvs0X06clMaxkiQBk0vBS17zISs1FlRe5trnkptC2BimBZbyUrKm4MEyaSsra0lw0Wd0IKAwbo7tjbx_8987GpDZ-F7rhpcoABB12oPmg7o_KBB9jsI3qg_vS4aCAqt_VFKjTaoN9ONpoXNLJ-e5_eO_DH1R93bAfEl959A</recordid><startdate>20170918</startdate><enddate>20170918</enddate><creator>Sang, Liwen</creator><creator>Ren, Bing</creator><creator>Sumiya, Masatomo</creator><creator>Liao, Meiyong</creator><creator>Koide, Yasuo</creator><creator>Tanaka, Atsushi</creator><creator>Cho, Yujin</creator><creator>Harada, Yoshitomo</creator><creator>Nabatame, Toshihide</creator><creator>Sekiguchi, Takashi</creator><creator>Usami, Shigeyoshi</creator><creator>Honda, Yoshio</creator><creator>Amano, Hiroshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0960-3812</orcidid><orcidid>https://orcid.org/0000-0001-8321-9822</orcidid><orcidid>https://orcid.org/0000-0001-9380-2106</orcidid></search><sort><creationdate>20170918</creationdate><title>Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes</title><author>Sang, Liwen ; Ren, Bing ; Sumiya, Masatomo ; Liao, Meiyong ; Koide, Yasuo ; Tanaka, Atsushi ; Cho, Yujin ; Harada, Yoshitomo ; Nabatame, Toshihide ; Sekiguchi, Takashi ; Usami, Shigeyoshi ; Honda, Yoshio ; Amano, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-1127c59ad5829a56b484ae475c8aed1771325973fb56c37cb77de046f2df618c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Current voltage characteristics</topic><topic>Dislocations</topic><topic>Emission analysis</topic><topic>Emission microscopy</topic><topic>Failure analysis</topic><topic>Gallium nitrides</topic><topic>Leakage current</topic><topic>Photon emission</topic><topic>Pits</topic><topic>Schottky diodes</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sang, Liwen</creatorcontrib><creatorcontrib>Ren, Bing</creatorcontrib><creatorcontrib>Sumiya, Masatomo</creatorcontrib><creatorcontrib>Liao, Meiyong</creatorcontrib><creatorcontrib>Koide, Yasuo</creatorcontrib><creatorcontrib>Tanaka, Atsushi</creatorcontrib><creatorcontrib>Cho, Yujin</creatorcontrib><creatorcontrib>Harada, Yoshitomo</creatorcontrib><creatorcontrib>Nabatame, Toshihide</creatorcontrib><creatorcontrib>Sekiguchi, Takashi</creatorcontrib><creatorcontrib>Usami, Shigeyoshi</creatorcontrib><creatorcontrib>Honda, Yoshio</creatorcontrib><creatorcontrib>Amano, Hiroshi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sang, Liwen</au><au>Ren, Bing</au><au>Sumiya, Masatomo</au><au>Liao, Meiyong</au><au>Koide, Yasuo</au><au>Tanaka, Atsushi</au><au>Cho, Yujin</au><au>Harada, Yoshitomo</au><au>Nabatame, Toshihide</au><au>Sekiguchi, Takashi</au><au>Usami, Shigeyoshi</au><au>Honda, Yoshio</au><au>Amano, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes</atitle><jtitle>Applied physics letters</jtitle><date>2017-09-18</date><risdate>2017</risdate><volume>111</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4994627</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0960-3812</orcidid><orcidid>https://orcid.org/0000-0001-8321-9822</orcidid><orcidid>https://orcid.org/0000-0001-9380-2106</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Current voltage characteristics Dislocations Emission analysis Emission microscopy Failure analysis Gallium nitrides Leakage current Photon emission Pits Schottky diodes Substrates |
| title | Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes |
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