Tuning chemical potential in the dirac cone by compositional engineering

To realize fully topological transport for any device applications it is essential to tune the chemical potential in the bulk gap of the Dirac cone. Bi2Se3 (BS) and Bi2Te3 (BT) thin films do not show in general topological transport as the chemical potential doesn’t lie entirely in the bulk gap. We...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	AIP advances 2017-10, Vol.7 (10), p.105112-105112-9
Hauptverfasser:	Gopal, R. K., Singh, Sourabh, Sarkar, Jit, Mitra, Chiranjib
Format:	Artikel
Sprache:	eng
Schlagworte:	Ablation Bismuth tellurides Chemical potential Organic chemistry Pulsed laser deposition Pulsed lasers Temperature dependence Thin films Topological insulators Transport X-ray diffraction
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!