Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells
We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations bet...
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Veröffentlicht in: | Applied physics letters 2017-10, Vol.111 (17) |
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creator | Tateishi, Kazutaka Wang, Pangpang Ryuzaki, Sou Funato, Mitsuru Kawakami, Yoichi Okamoto, Koichi Tamada, Kaoru |
description | We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs. |
doi_str_mv | 10.1063/1.4998798 |
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The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4998798</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Coating effects ; Energy transfer ; Excitons ; Localization ; Mapping ; Photoluminescence ; Piezoelectricity ; Polaritons ; Quantum wells ; Stark effect</subject><ispartof>Applied physics letters, 2017-10, Vol.111 (17)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.</description><subject>Applied physics</subject><subject>Coating effects</subject><subject>Energy transfer</subject><subject>Excitons</subject><subject>Localization</subject><subject>Mapping</subject><subject>Photoluminescence</subject><subject>Piezoelectricity</subject><subject>Polaritons</subject><subject>Quantum wells</subject><subject>Stark effect</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqd0E9LwzAUAPAgCs7pwW8Q8KTQLWmatDnK0DmYetFzSLtkzWiTLkkVv70ZG3j3EB55_Hj_ALjFaIYRI3M8KzivSl6dgQlGZZkRjKtzMEEIkYxxii_BVQi79KU5IRPQvprGu2xoXXTd2BurQqNso2Avh8HYLXQahtFrmVJDJ0PvLFS2lYlsYGe2bYSqNyEYZwPU3vVwZZfybZ4e3I_SxrGH36rrwjW40LIL6uYUp-Dz-elj8ZKt35erxeM6awgnMWMllajAiHNOVMVLUnK0SZMWVNZ5IylGNVVKM1lj2dBK0aJmFCWr8pprjsgU3B3rDt7tRxWi2LnR29RS5BgzlDNWHNT9UaXlQ_BKi8GbXvofgZE4HFJgcTpksg9HGxoTZUyb_g9_Of8HxbDR5BdTcYH3</recordid><startdate>20171023</startdate><enddate>20171023</enddate><creator>Tateishi, Kazutaka</creator><creator>Wang, Pangpang</creator><creator>Ryuzaki, Sou</creator><creator>Funato, Mitsuru</creator><creator>Kawakami, Yoichi</creator><creator>Okamoto, Koichi</creator><creator>Tamada, Kaoru</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5455-3757</orcidid></search><sort><creationdate>20171023</creationdate><title>Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells</title><author>Tateishi, Kazutaka ; Wang, Pangpang ; Ryuzaki, Sou ; Funato, Mitsuru ; Kawakami, Yoichi ; Okamoto, Koichi ; Tamada, Kaoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-675a04109993e8973790d23345ab2ca510b5eef6ab1ac58e54b65093ee2b9f903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Coating effects</topic><topic>Energy transfer</topic><topic>Excitons</topic><topic>Localization</topic><topic>Mapping</topic><topic>Photoluminescence</topic><topic>Piezoelectricity</topic><topic>Polaritons</topic><topic>Quantum wells</topic><topic>Stark effect</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tateishi, Kazutaka</creatorcontrib><creatorcontrib>Wang, Pangpang</creatorcontrib><creatorcontrib>Ryuzaki, Sou</creatorcontrib><creatorcontrib>Funato, Mitsuru</creatorcontrib><creatorcontrib>Kawakami, Yoichi</creatorcontrib><creatorcontrib>Okamoto, Koichi</creatorcontrib><creatorcontrib>Tamada, Kaoru</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tateishi, Kazutaka</au><au>Wang, Pangpang</au><au>Ryuzaki, Sou</au><au>Funato, Mitsuru</au><au>Kawakami, Yoichi</au><au>Okamoto, Koichi</au><au>Tamada, Kaoru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells</atitle><jtitle>Applied physics letters</jtitle><date>2017-10-23</date><risdate>2017</risdate><volume>111</volume><issue>17</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4998798</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-5455-3757</orcidid></addata></record> |
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subjects | Applied physics Coating effects Energy transfer Excitons Localization Mapping Photoluminescence Piezoelectricity Polaritons Quantum wells Stark effect |
title | Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells |
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