Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells

We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations bet...

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Veröffentlicht in:Applied physics letters 2017-10, Vol.111 (17)
Hauptverfasser: Tateishi, Kazutaka, Wang, Pangpang, Ryuzaki, Sou, Funato, Mitsuru, Kawakami, Yoichi, Okamoto, Koichi, Tamada, Kaoru
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container_issue 17
container_start_page
container_title Applied physics letters
container_volume 111
creator Tateishi, Kazutaka
Wang, Pangpang
Ryuzaki, Sou
Funato, Mitsuru
Kawakami, Yoichi
Okamoto, Koichi
Tamada, Kaoru
description We conducted photoluminescence (PL) mapping to elucidate the detailed mechanism of PL enhancement based on the energy transfer from excitons to surface plasmon polaritons (SPPs) in silver-coated InGaN quantum wells (QWs). The PL mapping for bare InGaN QWs showed positive or negative correlations between the PL peak intensity and wavelength. These correlations are normally caused by exciton localization and the quantum confined Stark effect, respectively; however, they did not appear in the silver-coated region of the InGaN QWs, and the wavelength distribution shifted into shorter wavelengths due to the SP-induced PL enhancement. These results suggest that the energy transfer from the excitons to the SPPs should be much faster than that in the exciton localization and charge screening processes of the piezoelectric field in QWs.
doi_str_mv 10.1063/1.4998798
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subjects Applied physics
Coating effects
Energy transfer
Excitons
Localization
Mapping
Photoluminescence
Piezoelectricity
Polaritons
Quantum wells
Stark effect
title Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells
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