Luminescence of defects in the structural transformation of layered tin dichalcogenides
Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS2, Sn2S3, and SnS), which can transform into phases with a lower sulfur concentration by introdu...
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creator | Sutter, P. Komsa, H.-P. Krasheninnikov, A. V. Huang, Y. Sutter, E. |
description | Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS2, Sn2S3, and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (VS). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. Here, we use the capability to induce VS and drive a transformation between few-layer SnS2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral VS in SnS2. These findings provide insight into the intrinsic and defect-related optoelectronic properties of Sn chalcogenide semiconductors. |
doi_str_mv | 10.1063/1.5007060 |
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V. ; Huang, Y. ; Sutter, E.</creator><creatorcontrib>Sutter, P. ; Komsa, H.-P. ; Krasheninnikov, A. V. ; Huang, Y. ; Sutter, E.</creatorcontrib><description>Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS2, Sn2S3, and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (VS). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. Here, we use the capability to induce VS and drive a transformation between few-layer SnS2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral VS in SnS2. 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V.</creatorcontrib><creatorcontrib>Huang, Y.</creatorcontrib><creatorcontrib>Sutter, E.</creatorcontrib><title>Luminescence of defects in the structural transformation of layered tin dichalcogenides</title><title>Applied physics letters</title><description>Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS2, Sn2S3, and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (VS). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. Here, we use the capability to induce VS and drive a transformation between few-layer SnS2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral VS in SnS2. These findings provide insight into the intrinsic and defect-related optoelectronic properties of Sn chalcogenide semiconductors.</description><subject>Applied physics</subject><subject>Cathodoluminescence</subject><subject>Chalcogenides</subject><subject>Crystal defects</subject><subject>Electron beams</subject><subject>Electron irradiation</subject><subject>Energy conversion</subject><subject>Layered materials</subject><subject>Luminescence</subject><subject>Mathematical analysis</subject><subject>Optoelectronics</subject><subject>Semiconductors</subject><subject>Sulfur</subject><subject>Tin</subject><subject>Tin disulfide</subject><subject>Transformations</subject><subject>Vacancies</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp90MtKAzEUBuAgCtbqwjcYdKUwNZdOZrKU4g0KbhSXIT05sVPapCYZoW_v1BZdCK7CIR_n8hNyzuiIUSlu2KiitKaSHpABo3VdCsaaQzKglIpSqoodk5OUFn1ZcSEG5G3arVqPCdADFsEVFh1CTkXrizzHIuXYQe6iWRY5Gp9ciCuT2-C3dmk2GNEWuce2hblZQnhH31pMp-TImWXCs_07JK_3dy-Tx3L6_PA0uZ2WIBqVS-ZmXFlpZ7JSXDlppULTzGrTWCmpAQbIVVWDa2oDILkSHHDc0P5DOMsrMSQXu74h5VYnaDPCHIL3_RGajdlY1bxHlzu0juGjw5T1InTR93tpzpjss6iqrbraKYghpYhOr2O7MnGjGdXbcDXT-3B7e72z24nfefzgzxB_oV5b9x_-2_kL2QOIWg</recordid><startdate>20171225</startdate><enddate>20171225</enddate><creator>Sutter, P.</creator><creator>Komsa, H.-P.</creator><creator>Krasheninnikov, A. V.</creator><creator>Huang, Y.</creator><creator>Sutter, E.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-3301-309X</orcidid><orcidid>https://orcid.org/000000023301309X</orcidid></search><sort><creationdate>20171225</creationdate><title>Luminescence of defects in the structural transformation of layered tin dichalcogenides</title><author>Sutter, P. ; Komsa, H.-P. ; Krasheninnikov, A. V. ; Huang, Y. ; Sutter, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-1fb29d6db65929f6d69ea8b7a8d660ac1ce2957cf87acc62932ce480c1c3fd253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Cathodoluminescence</topic><topic>Chalcogenides</topic><topic>Crystal defects</topic><topic>Electron beams</topic><topic>Electron irradiation</topic><topic>Energy conversion</topic><topic>Layered materials</topic><topic>Luminescence</topic><topic>Mathematical analysis</topic><topic>Optoelectronics</topic><topic>Semiconductors</topic><topic>Sulfur</topic><topic>Tin</topic><topic>Tin disulfide</topic><topic>Transformations</topic><topic>Vacancies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sutter, P.</creatorcontrib><creatorcontrib>Komsa, H.-P.</creatorcontrib><creatorcontrib>Krasheninnikov, A. 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Here, we use the capability to induce VS and drive a transformation between few-layer SnS2 and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS2 to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS2 with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral VS in SnS2. 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subjects | Applied physics Cathodoluminescence Chalcogenides Crystal defects Electron beams Electron irradiation Energy conversion Layered materials Luminescence Mathematical analysis Optoelectronics Semiconductors Sulfur Tin Tin disulfide Transformations Vacancies |
title | Luminescence of defects in the structural transformation of layered tin dichalcogenides |
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