Self-mode-locked AlGaInP-VECSEL

We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is ach...

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Veröffentlicht in:	Applied physics letters 2017-10, Vol.111 (18)
Hauptverfasser:	Bek, R., Großmann, M., Kahle, H., Koch, M., Rahimi-Iman, A., Jetter, M., Michler, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active regions (lasers) Aluminum gallium indium phosphides Applied physics Beams (radiation) Emission analysis Frequency spectrum Gaussian beams (optics) Lasers Pulse duration Quantum wells
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