Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals

The radiative performance of hexagonal boron nitride (h-BN) was assessed by the spatio-time-resolved luminescence measurements on its microcrystals (MCs) annealed in an O2 gas ambient. The MCs exhibited distinct deep ultraviolet luminescence peaks higher than 5.7 eV, although h-BN is an indirect ban...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2018-02, Vol.123 (6)
Hauptverfasser:	Chichibu, Shigefusa F., Ishikawa, Youichi, Kominami, Hiroko, Hara, Kazuhiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Boron nitride Brillouin zones Divacancies Excitons Gallium nitrides Light emission Luminescence Luminous intensity Microcrystals Nitrogen Phonons Quenching Strong interactions (field theory) Ultraviolet radiation Vacancies
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!