Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport

•N-Al co-doped n-type 4H-SiC crystals were grown using the PVT method.•The relation between impurity concentration and Al4C3 temperature was investigated.•The threading dislocation density of highly N-Al co-doped crystal was high.•The expansion velocities of the DSFs in the N-Al co-doped crystals we...

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