Study of porous GaN dimension for ultra-violet photodetector

In this study, the characterization of porous Gallium Nitrate (PG) for potential Ultra-violet (UV) light emission was examined by simulation. The simulation was carried out using SILVACO TCAD tools to fabricate the PG. By using DevEdit, the structure was constructed, and the device simulation was carried out using ATLAS provided by the SILVACO TCAD. Different pore width sizes of the PG structures were developed. The optical and electrical properties of the structural PG were measured by Current-Voltage (I-V), current gain, spectral response and energy band gap. It was discovered that the PG enhanced the current gain up to 88.98% compared to bulk GaN and exhibited photo emission in the UV spectrum by 24.35% higher compared to Bulk GaN.