Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying app...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2018-10, Vol.124 (15)
Hauptverfasser: Castán, H., Dueñas, S., García, H., Ossorio, O. G., Domínguez, L. A., Sahelices, B., Miranda, E., González, M. B., Campabadal, F.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 15
container_start_page
container_title Journal of applied physics
container_volume 124
creator Castán, H.
Dueñas, S.
García, H.
Ossorio, O. G.
Domínguez, L. A.
Sahelices, B.
Miranda, E.
González, M. B.
Campabadal, F.
description A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance) components of the admittance is described. An accurate control of the memory state is achieved both in terms of the conductance and the susceptance by means of an adequate selection of the voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.
doi_str_mv 10.1063/1.5024836
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2111883640</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2111883640</sourcerecordid><originalsourceid>FETCH-LOGICAL-c362t-6f13f620fa83c21210a6b0b477327ff0f54598996679eb4404d81e8bacd6c4823</originalsourceid><addsrcrecordid>eNp90MtKAzEYBeAgCtbqwjcIuFKYmstMJlmW4g0qQtF1yGQSmtKZ1CQtzNub2qILwVX4yceBcwC4xmiCEaP3eFIhUnLKTsAIIy6KuqrQKRghRHDBRS3OwUWMK4Qw5lSMwHLaq_UQXYSqb6H2fQp-Db2FaWmg65MJnWmdSgZ2pvNhgDHlI-7FYjF9ha3ZOZ3vZshA9d8fqu1cSqrXBm5UUJ3JKfESnFm1jubq-I7Bx-PD--y5mL89vcym80JTRlLBLKaWEWQVp5pggpFiDWrKuqakthbZqqwEF4KxWpimLFHZcmx4o3TLdMkJHYObQ-4m-M-tiUmu_DbkklESnEvnaUqU1e1B6eBjDMbKTXCdCoPESO6HlFgeh8z27mCjdrm88_0P3vnwC-Wmtf_hv8lfgU-A5Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2111883640</pqid></control><display><type>article</type><title>Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Castán, H. ; Dueñas, S. ; García, H. ; Ossorio, O. G. ; Domínguez, L. A. ; Sahelices, B. ; Miranda, E. ; González, M. B. ; Campabadal, F.</creator><creatorcontrib>Castán, H. ; Dueñas, S. ; García, H. ; Ossorio, O. G. ; Domínguez, L. A. ; Sahelices, B. ; Miranda, E. ; González, M. B. ; Campabadal, F.</creatorcontrib><description>A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance) components of the admittance is described. An accurate control of the memory state is achieved both in terms of the conductance and the susceptance by means of an adequate selection of the voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5024836</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Bias ; Electric potential ; Electrical impedance ; Hafnium oxide ; Initial conditions ; Memory devices ; Parameters ; Power consumption ; Random access memory ; Resistance ; Static random access memory ; Susceptance ; Waveforms</subject><ispartof>Journal of applied physics, 2018-10, Vol.124 (15)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-6f13f620fa83c21210a6b0b477327ff0f54598996679eb4404d81e8bacd6c4823</citedby><cites>FETCH-LOGICAL-c362t-6f13f620fa83c21210a6b0b477327ff0f54598996679eb4404d81e8bacd6c4823</cites><orcidid>0000-0001-6792-4556 ; 0000-0003-3457-2317 ; 0000-0002-3874-721X ; 0000-0001-7758-4567 ; 0000-0002-2328-1752</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5024836$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Castán, H.</creatorcontrib><creatorcontrib>Dueñas, S.</creatorcontrib><creatorcontrib>García, H.</creatorcontrib><creatorcontrib>Ossorio, O. G.</creatorcontrib><creatorcontrib>Domínguez, L. A.</creatorcontrib><creatorcontrib>Sahelices, B.</creatorcontrib><creatorcontrib>Miranda, E.</creatorcontrib><creatorcontrib>González, M. B.</creatorcontrib><creatorcontrib>Campabadal, F.</creatorcontrib><title>Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters</title><title>Journal of applied physics</title><description>A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance) components of the admittance is described. An accurate control of the memory state is achieved both in terms of the conductance and the susceptance by means of an adequate selection of the voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.</description><subject>Applied physics</subject><subject>Bias</subject><subject>Electric potential</subject><subject>Electrical impedance</subject><subject>Hafnium oxide</subject><subject>Initial conditions</subject><subject>Memory devices</subject><subject>Parameters</subject><subject>Power consumption</subject><subject>Random access memory</subject><subject>Resistance</subject><subject>Static random access memory</subject><subject>Susceptance</subject><subject>Waveforms</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90MtKAzEYBeAgCtbqwjcIuFKYmstMJlmW4g0qQtF1yGQSmtKZ1CQtzNub2qILwVX4yceBcwC4xmiCEaP3eFIhUnLKTsAIIy6KuqrQKRghRHDBRS3OwUWMK4Qw5lSMwHLaq_UQXYSqb6H2fQp-Db2FaWmg65MJnWmdSgZ2pvNhgDHlI-7FYjF9ha3ZOZ3vZshA9d8fqu1cSqrXBm5UUJ3JKfESnFm1jubq-I7Bx-PD--y5mL89vcym80JTRlLBLKaWEWQVp5pggpFiDWrKuqakthbZqqwEF4KxWpimLFHZcmx4o3TLdMkJHYObQ-4m-M-tiUmu_DbkklESnEvnaUqU1e1B6eBjDMbKTXCdCoPESO6HlFgeh8z27mCjdrm88_0P3vnwC-Wmtf_hv8lfgU-A5Q</recordid><startdate>20181021</startdate><enddate>20181021</enddate><creator>Castán, H.</creator><creator>Dueñas, S.</creator><creator>García, H.</creator><creator>Ossorio, O. G.</creator><creator>Domínguez, L. A.</creator><creator>Sahelices, B.</creator><creator>Miranda, E.</creator><creator>González, M. B.</creator><creator>Campabadal, F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6792-4556</orcidid><orcidid>https://orcid.org/0000-0003-3457-2317</orcidid><orcidid>https://orcid.org/0000-0002-3874-721X</orcidid><orcidid>https://orcid.org/0000-0001-7758-4567</orcidid><orcidid>https://orcid.org/0000-0002-2328-1752</orcidid></search><sort><creationdate>20181021</creationdate><title>Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters</title><author>Castán, H. ; Dueñas, S. ; García, H. ; Ossorio, O. G. ; Domínguez, L. A. ; Sahelices, B. ; Miranda, E. ; González, M. B. ; Campabadal, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-6f13f620fa83c21210a6b0b477327ff0f54598996679eb4404d81e8bacd6c4823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Bias</topic><topic>Electric potential</topic><topic>Electrical impedance</topic><topic>Hafnium oxide</topic><topic>Initial conditions</topic><topic>Memory devices</topic><topic>Parameters</topic><topic>Power consumption</topic><topic>Random access memory</topic><topic>Resistance</topic><topic>Static random access memory</topic><topic>Susceptance</topic><topic>Waveforms</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Castán, H.</creatorcontrib><creatorcontrib>Dueñas, S.</creatorcontrib><creatorcontrib>García, H.</creatorcontrib><creatorcontrib>Ossorio, O. G.</creatorcontrib><creatorcontrib>Domínguez, L. A.</creatorcontrib><creatorcontrib>Sahelices, B.</creatorcontrib><creatorcontrib>Miranda, E.</creatorcontrib><creatorcontrib>González, M. B.</creatorcontrib><creatorcontrib>Campabadal, F.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Castán, H.</au><au>Dueñas, S.</au><au>García, H.</au><au>Ossorio, O. G.</au><au>Domínguez, L. A.</au><au>Sahelices, B.</au><au>Miranda, E.</au><au>González, M. B.</au><au>Campabadal, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters</atitle><jtitle>Journal of applied physics</jtitle><date>2018-10-21</date><risdate>2018</risdate><volume>124</volume><issue>15</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance) components of the admittance is described. An accurate control of the memory state is achieved both in terms of the conductance and the susceptance by means of an adequate selection of the voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5024836</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-6792-4556</orcidid><orcidid>https://orcid.org/0000-0003-3457-2317</orcidid><orcidid>https://orcid.org/0000-0002-3874-721X</orcidid><orcidid>https://orcid.org/0000-0001-7758-4567</orcidid><orcidid>https://orcid.org/0000-0002-2328-1752</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2018-10, Vol.124 (15)
issn 0021-8979
1089-7550
language eng
recordid cdi_proquest_journals_2111883640
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Bias
Electric potential
Electrical impedance
Hafnium oxide
Initial conditions
Memory devices
Parameters
Power consumption
Random access memory
Resistance
Static random access memory
Susceptance
Waveforms
title Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T10%3A29%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20and%20control%20of%20the%20intermediate%20memory%20states%20of%20RRAM%20devices%20by%20means%20of%20admittance%20parameters&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Cast%C3%A1n,%20H.&rft.date=2018-10-21&rft.volume=124&rft.issue=15&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5024836&rft_dat=%3Cproquest_cross%3E2111883640%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2111883640&rft_id=info:pmid/&rfr_iscdi=true