Dependence of hysteresis on the perovskite film thickness: inverse behavior between TiO2 and PCBM in a normal planar structure

The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-t...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2018, Vol.6 (37), p.1826-18215
Hauptverfasser: Cho, An-Na, Jang, In-Hyuk, Seo, Ja-Young, Park, Nam-Gyu
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container_title Journal of materials chemistry. A, Materials for energy and sustainability
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creator Cho, An-Na
Jang, In-Hyuk
Seo, Ja-Young
Park, Nam-Gyu
description The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene). A compact TiO 2 (c-TiO 2 ) layer is used as an ETL, which is compared with a PCBM ETL and a c-TiO 2 /PCBM bilayered ETL. The MAPbI 3 layer thickness is varied from 100 nm to 800 nm by controlling the precursor solution concentration. The hysteresis increases with perovskite layer thickness for the c-TiO 2 layer, while the hysteresis decreases with increasing the perovskite layer thickness in the presence of PCBM. Deep trap states are much more reduced upon inserting PCBM compared with those of the c-TiO 2 case, indicative of fewer traps for non-radiative recombination. The ideality factor obtained from the light-dependent open-circuit voltage ( V oc ) increases for the c-TiO 2 layer but decreases for both the c-TiO 2 /PCBM bilayer and the PCBM layer as the perovskite layer thickness increases, which again supports that the dependence of hysteresis on the perovskite thickness is related to trap states, that is, decreases in deep trap states can reduce hysteresis. From the capacitance-frequency studies, it is found that the low-frequency capacitance correlates with the observed hysteresis, where it increases for the c-TiO 2 layer but decreases for the PCBM containing ETLs with perovskite thickness. This work provides important insight into the hysteresis behavior of PSCs, where the hysteresis depends not only on the nature of the ETL but also on the degree of recombination in the bulk perovskite. The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene).
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A compact TiO 2 (c-TiO 2 ) layer is used as an ETL, which is compared with a PCBM ETL and a c-TiO 2 /PCBM bilayered ETL. The MAPbI 3 layer thickness is varied from 100 nm to 800 nm by controlling the precursor solution concentration. The hysteresis increases with perovskite layer thickness for the c-TiO 2 layer, while the hysteresis decreases with increasing the perovskite layer thickness in the presence of PCBM. Deep trap states are much more reduced upon inserting PCBM compared with those of the c-TiO 2 case, indicative of fewer traps for non-radiative recombination. The ideality factor obtained from the light-dependent open-circuit voltage ( V oc ) increases for the c-TiO 2 layer but decreases for both the c-TiO 2 /PCBM bilayer and the PCBM layer as the perovskite layer thickness increases, which again supports that the dependence of hysteresis on the perovskite thickness is related to trap states, that is, decreases in deep trap states can reduce hysteresis. From the capacitance-frequency studies, it is found that the low-frequency capacitance correlates with the observed hysteresis, where it increases for the c-TiO 2 layer but decreases for the PCBM containing ETLs with perovskite thickness. This work provides important insight into the hysteresis behavior of PSCs, where the hysteresis depends not only on the nature of the ETL but also on the degree of recombination in the bulk perovskite. The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene).</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/c8ta04919j</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Capacitance ; Dependence ; Electron transport ; Film thickness ; Hysteresis ; Open circuit voltage ; Perovskites ; Photovoltaic cells ; Planar structures ; Radiative recombination ; Rapid prototyping ; Recombination ; Solar cells ; Titanium dioxide ; Voltage</subject><ispartof>Journal of materials chemistry. 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A, Materials for energy and sustainability</title><description>The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene). A compact TiO 2 (c-TiO 2 ) layer is used as an ETL, which is compared with a PCBM ETL and a c-TiO 2 /PCBM bilayered ETL. The MAPbI 3 layer thickness is varied from 100 nm to 800 nm by controlling the precursor solution concentration. The hysteresis increases with perovskite layer thickness for the c-TiO 2 layer, while the hysteresis decreases with increasing the perovskite layer thickness in the presence of PCBM. Deep trap states are much more reduced upon inserting PCBM compared with those of the c-TiO 2 case, indicative of fewer traps for non-radiative recombination. The ideality factor obtained from the light-dependent open-circuit voltage ( V oc ) increases for the c-TiO 2 layer but decreases for both the c-TiO 2 /PCBM bilayer and the PCBM layer as the perovskite layer thickness increases, which again supports that the dependence of hysteresis on the perovskite thickness is related to trap states, that is, decreases in deep trap states can reduce hysteresis. From the capacitance-frequency studies, it is found that the low-frequency capacitance correlates with the observed hysteresis, where it increases for the c-TiO 2 layer but decreases for the PCBM containing ETLs with perovskite thickness. 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The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene).</description><subject>Capacitance</subject><subject>Dependence</subject><subject>Electron transport</subject><subject>Film thickness</subject><subject>Hysteresis</subject><subject>Open circuit voltage</subject><subject>Perovskites</subject><subject>Photovoltaic cells</subject><subject>Planar structures</subject><subject>Radiative recombination</subject><subject>Rapid prototyping</subject><subject>Recombination</subject><subject>Solar cells</subject><subject>Titanium dioxide</subject><subject>Voltage</subject><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpFkM1LAzEQxYMoWGov3oUBz9Vkk-4m3rR-QqUe6nlJsxObdptdk2ylF_92Fyr6LvN482MGHiHnjF4xytW1kUlToZhaH5FBRid0XAiVH_95KU_JKMY17SUpzZUakO97bNFX6A1CY2G1jwkDRheh8ZBWCC2GZhc3LiFYV2_7zJmNxxhvwPkdhoiwxJXeuSb0Jn0heli4eQbaV_A2vXvtMdDgm7DVNbS19jpATKEzqQt4Rk6sriOOfueQvD8-LKbP49n86WV6Oxt_cCrTWBUTRXnFbIF5ZqhGY_gys5kSKAvOLU6YLAQvLLNCGKEF01m_WNJKUGEKzYfk8nC3Dc1nhzGV66YLvn9ZZowxyVmueE9dHKgQTdkGt9VhX_63yn8A2BxrXA</recordid><startdate>2018</startdate><enddate>2018</enddate><creator>Cho, An-Na</creator><creator>Jang, In-Hyuk</creator><creator>Seo, Ja-Young</creator><creator>Park, Nam-Gyu</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7SR</scope><scope>7ST</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>JG9</scope><scope>L7M</scope><scope>SOI</scope></search><sort><creationdate>2018</creationdate><title>Dependence of hysteresis on the perovskite film thickness: inverse behavior between TiO2 and PCBM in a normal planar structure</title><author>Cho, An-Na ; Jang, In-Hyuk ; Seo, Ja-Young ; Park, Nam-Gyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-g308t-975903d1f7e62c0aecc3b2f294e8733fe5187437f1f44c4a41a2873b0d404c7a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Capacitance</topic><topic>Dependence</topic><topic>Electron transport</topic><topic>Film thickness</topic><topic>Hysteresis</topic><topic>Open circuit voltage</topic><topic>Perovskites</topic><topic>Photovoltaic cells</topic><topic>Planar structures</topic><topic>Radiative recombination</topic><topic>Rapid prototyping</topic><topic>Recombination</topic><topic>Solar cells</topic><topic>Titanium dioxide</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, An-Na</creatorcontrib><creatorcontrib>Jang, In-Hyuk</creatorcontrib><creatorcontrib>Seo, Ja-Young</creatorcontrib><creatorcontrib>Park, Nam-Gyu</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Environment Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, An-Na</au><au>Jang, In-Hyuk</au><au>Seo, Ja-Young</au><au>Park, Nam-Gyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of hysteresis on the perovskite film thickness: inverse behavior between TiO2 and PCBM in a normal planar structure</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2018</date><risdate>2018</risdate><volume>6</volume><issue>37</issue><spage>1826</spage><epage>18215</epage><pages>1826-18215</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene). A compact TiO 2 (c-TiO 2 ) layer is used as an ETL, which is compared with a PCBM ETL and a c-TiO 2 /PCBM bilayered ETL. The MAPbI 3 layer thickness is varied from 100 nm to 800 nm by controlling the precursor solution concentration. The hysteresis increases with perovskite layer thickness for the c-TiO 2 layer, while the hysteresis decreases with increasing the perovskite layer thickness in the presence of PCBM. Deep trap states are much more reduced upon inserting PCBM compared with those of the c-TiO 2 case, indicative of fewer traps for non-radiative recombination. The ideality factor obtained from the light-dependent open-circuit voltage ( V oc ) increases for the c-TiO 2 layer but decreases for both the c-TiO 2 /PCBM bilayer and the PCBM layer as the perovskite layer thickness increases, which again supports that the dependence of hysteresis on the perovskite thickness is related to trap states, that is, decreases in deep trap states can reduce hysteresis. From the capacitance-frequency studies, it is found that the low-frequency capacitance correlates with the observed hysteresis, where it increases for the c-TiO 2 layer but decreases for the PCBM containing ETLs with perovskite thickness. This work provides important insight into the hysteresis behavior of PSCs, where the hysteresis depends not only on the nature of the ETL but also on the degree of recombination in the bulk perovskite. The effect of perovskite film thickness on the current density ( J )-voltage ( V ) hysteresis is investigated with a normal planar perovskite solar cell (PSC) having the FTO/ETL/MAPbI 3 /spiro-MeOTAD/Au structure (ETL = electron transporting layer, MA = methylammonium, and spiro-MeOTAD = 2,2′,7,7′-tetrakis-( N , N -di-4-methoxyphenylamino)-9,9′-spirobifluorene).</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c8ta04919j</doi><tpages>1</tpages></addata></record>
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subjects Capacitance
Dependence
Electron transport
Film thickness
Hysteresis
Open circuit voltage
Perovskites
Photovoltaic cells
Planar structures
Radiative recombination
Rapid prototyping
Recombination
Solar cells
Titanium dioxide
Voltage
title Dependence of hysteresis on the perovskite film thickness: inverse behavior between TiO2 and PCBM in a normal planar structure
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