Gate‐Induced Massive and Reversible Phase Transition of VO2 Channels Using Solid‐State Proton Electrolytes

The use of gate bias to control electronic phases in VO2, an archetypical correlated oxide, offers a powerful method to probe their underlying physics, as well as for the potential to develop novel electronic devices. Up to date, purely electrostatic gating in 3‐terminal devices with correlated chan...

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Veröffentlicht in:Advanced functional materials 2018-09, Vol.28 (39), p.n/a
Hauptverfasser: Jo, Minguk, Lee, Hyeon Jun, Oh, Chadol, Yoon, Hyojin, Jo, Ji Young, Son, Junwoo
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Sprache:eng
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