Characterization of Double-Junction GaAsP Two-Color LED Structure

The structural, optical, electrical and electrical–optical properties of a double-junction GaAsP light-emitting diode (LED) structure grown on a GaP (100) substrate by using a molecular beam epitaxy technique were investigated. The p – n junction layers of GaAs 1− x P x and GaAs 1− y P y , which for...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2018-12, Vol.47 (12), p.7129-7133
Hauptverfasser:	Ozen, Yunus, Sertel, Tunc, Cetin, Saime Sebnem, Ozcelik, Suleyman
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Color Composition Crystal structure Electric potential Electrical junctions Electrical properties Electronics and Microelectronics Instrumentation Light emitting diodes Materials Science Molecular beam epitaxy Optical and Electronic Materials Optical properties P-n junctions Photoluminescence Solid State Physics Substrates X-ray diffraction
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!