Electron–Phonon Scattering in AlAs and Its Response to Hydrostatic Pressure
We perform first principles calculations to predict the electron–phonon (e–ph) scattering rates in AlAs and their dependence on phonon modes at energies close to the conduction band minima (CBM), as well as high into the conduction band. We then study the effect of hydrostatic pressure on the e–ph s...
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| Veröffentlicht in: | Journal of electronic materials 2018-12, Vol.47 (12), p.7191-7195 |
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| creator | Tandon, Nandan Ram-Mohan, L. R. Albrecht, J. D. |
| description | We perform first principles calculations to predict the electron–phonon (e–ph) scattering rates in AlAs and their dependence on phonon modes at energies close to the conduction band minima (CBM), as well as high into the conduction band. We then study the effect of hydrostatic pressure on the e–ph scattering in AlAs for pressures up to
∼
8.77 GPa. The effect of such pressures on the electronic structure and phonon dispersion is well documented. In AlAs, the bandgap becomes smaller, whereas the effect on phonon dispersion is to shift the optical phonon bands to higher frequencies and the acoustic branches to lower frequencies. In light of this, we explore the effect of hydrostatic pressure on the resulting scattering rates with increasing pressure along the high symmetry
L
→
Γ
→
X
path. The results suggest that hydrostatic pressure does not significantly affect electron–phonon scattering rate. |
| doi_str_mv | 10.1007/s11664-018-6651-5 |
| format | Article |
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∼
8.77 GPa. The effect of such pressures on the electronic structure and phonon dispersion is well documented. In AlAs, the bandgap becomes smaller, whereas the effect on phonon dispersion is to shift the optical phonon bands to higher frequencies and the acoustic branches to lower frequencies. In light of this, we explore the effect of hydrostatic pressure on the resulting scattering rates with increasing pressure along the high symmetry
L
→
Γ
→
X
path. The results suggest that hydrostatic pressure does not significantly affect electron–phonon scattering rate.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-018-6651-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Conduction bands ; Dependence ; Dispersion ; Electronic structure ; Electronics and Microelectronics ; Electrons ; First principles ; Hydrostatic pressure ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Pressure effects ; Scattering ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2018-12, Vol.47 (12), p.7191-7195</ispartof><rights>The Minerals, Metals & Materials Society 2018</rights><rights>Journal of Electronic Materials is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-4cb51bd2bab179f3a3f5da2b925a8b3ebefbc4233e68f0c5a527c56c21b1eb283</citedby><cites>FETCH-LOGICAL-c316t-4cb51bd2bab179f3a3f5da2b925a8b3ebefbc4233e68f0c5a527c56c21b1eb283</cites><orcidid>0000-0003-1698-027X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-018-6651-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-018-6651-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Tandon, Nandan</creatorcontrib><creatorcontrib>Ram-Mohan, L. R.</creatorcontrib><creatorcontrib>Albrecht, J. D.</creatorcontrib><title>Electron–Phonon Scattering in AlAs and Its Response to Hydrostatic Pressure</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>We perform first principles calculations to predict the electron–phonon (e–ph) scattering rates in AlAs and their dependence on phonon modes at energies close to the conduction band minima (CBM), as well as high into the conduction band. We then study the effect of hydrostatic pressure on the e–ph scattering in AlAs for pressures up to
∼
8.77 GPa. The effect of such pressures on the electronic structure and phonon dispersion is well documented. In AlAs, the bandgap becomes smaller, whereas the effect on phonon dispersion is to shift the optical phonon bands to higher frequencies and the acoustic branches to lower frequencies. In light of this, we explore the effect of hydrostatic pressure on the resulting scattering rates with increasing pressure along the high symmetry
L
→
Γ
→
X
path. The results suggest that hydrostatic pressure does not significantly affect electron–phonon scattering rate.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Conduction bands</subject><subject>Dependence</subject><subject>Dispersion</subject><subject>Electronic structure</subject><subject>Electronics and Microelectronics</subject><subject>Electrons</subject><subject>First principles</subject><subject>Hydrostatic pressure</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Pressure effects</subject><subject>Scattering</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kM1KAzEURoMoWKsP4C7gejQ3maTpshS1hYrFH3AXkkxGp9RkTNJFd76Db-iTOMMIrlxduHznu5eD0DmQSyBkcpUAhCgLArIQgkPBD9AIeMkKkOLlEI0IE92SMn6MTlLaEAIcJIzQ3fXW2RyD__78Wr8FHzx-tDpnFxv_ihuPZ9tZwtpXeJkTfnCpDT45nANe7KsYUta5sXgdXUq76E7RUa23yZ39zjF6vrl-mi-K1f3tcj5bFZaByEVpDQdTUaMNTKY106zmlaZmSrmWhjnjamNLypgTsiaWa04nlgtLwYAzVLIxuhh62xg-di5ltQm76LuTigKRhE655F0KhpTtHk3R1aqNzbuOewVE9dbUYE111lRvTfUMHZjU9gZc_Gv-H_oBEo1xCw</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Tandon, Nandan</creator><creator>Ram-Mohan, L. 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R. ; Albrecht, J. 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R.</au><au>Albrecht, J. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron–Phonon Scattering in AlAs and Its Response to Hydrostatic Pressure</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>47</volume><issue>12</issue><spage>7191</spage><epage>7195</epage><pages>7191-7195</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>We perform first principles calculations to predict the electron–phonon (e–ph) scattering rates in AlAs and their dependence on phonon modes at energies close to the conduction band minima (CBM), as well as high into the conduction band. We then study the effect of hydrostatic pressure on the e–ph scattering in AlAs for pressures up to
∼
8.77 GPa. The effect of such pressures on the electronic structure and phonon dispersion is well documented. In AlAs, the bandgap becomes smaller, whereas the effect on phonon dispersion is to shift the optical phonon bands to higher frequencies and the acoustic branches to lower frequencies. In light of this, we explore the effect of hydrostatic pressure on the resulting scattering rates with increasing pressure along the high symmetry
L
→
Γ
→
X
path. The results suggest that hydrostatic pressure does not significantly affect electron–phonon scattering rate.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-018-6651-5</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-1698-027X</orcidid></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Conduction bands Dependence Dispersion Electronic structure Electronics and Microelectronics Electrons First principles Hydrostatic pressure Instrumentation Materials Science Optical and Electronic Materials Pressure effects Scattering Solid State Physics |
| title | Electron–Phonon Scattering in AlAs and Its Response to Hydrostatic Pressure |
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