Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation

An analytic model of low-dimensional transit-time diodes and transistors for the generation and detection of THz radiation in a linear approximation with respect to an alternating electric field is developed. Thin layers of silicon and arrays of nanowires are proposed as promising structures. It is...

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Veröffentlicht in:	Russian microelectronics 2018-09, Vol.47 (5), p.290-298
Hauptverfasser:	Vyurkov, V. V., Khabutdinov, R. R., Nemtsov, A. B., Semenikhin, I. A., Rudenko, M. K., Rudenko, K. V., Lukichev, V. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diodes Electric contacts Electrical Engineering Engineering Mathematical analysis Mathematical models Nanowires Scattering Semiconductor devices Thin films Transistors Transit time
Online-Zugang:	Volltext
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