Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas‐phase methods and requires high‐temperature condition. As an alternative to the gas‐phase synthetic approach, lower temperature eutectic liquid‐phase synthesis presents a very promising approach with the potential for larger‐scale and controllable growth of high‐quality thin metallic TMD single crystals. Here, the first realization of low‐temperature eutectic liquid‐phase synthesis of type‐II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm is presented. The electrical measurement of synthesized PtTe2 reveals a record‐high conductivity of as high as 3.3 × 106 S m−1 at room temperature. Besides, the weak antilocalization behavior is identified experimentally in the type‐II Dirac semimetal PtTe2 for the first time. Furthermore, a simple and general strategy is developed to obtain atomically thin PtTe2 crystal by thinning as‐synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electrical conductivity. The results of controllable and scalable low‐temperature eutectic liquid‐phase synthesis and layer‐by‐layer thinning of high‐quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high melting‐point transition metal. The first low‐temperature eutectic synthesis of type‐II Dirac semimetal PtTe2 single crystals is reported, revealing a record‐high conductivity of 3.3 × 106 S m−1 at room temperature. The weak antilocalization behavior in the PtTe2 is identified experimentally. Furthermore, a general strategy is developed to obtain highly crystalline atomically thin PtTe2 crystal by thinning as‐synthesized bulk samples.