Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two d...
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| Veröffentlicht in: | Solid state phenomena 2018-08, Vol.282, p.25-30 |
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| container_title | Solid state phenomena |
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| creator | Jotheeswaran, Bubesh Tolle, John Wang, Fei Lin, Xing Demos, Alex Gao, Pei Pei |
| description | Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two distinct chemistries. FTIR and SEM are used to characterize the conversion and sublimation steps of cleaning native oxide, and carbon film etch rate by hydrogen radicals is presented. The carbon cleaning and oxide cleaning capabilities are integrated in Previum chamber and significantly improved cleaning results are supported by SIMS. |
| doi_str_mv | 10.4028/www.scientific.net/SSP.282.25 |
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| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2098131674</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2098131674</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2085-aeb6ed0feb722cd4c3b7fd825b645450f2588ca395aca996c474e99d4c0582c73</originalsourceid><addsrcrecordid>eNqNkNFKwzAUhoMoOKfvEBAv26Vp0yYXIlJ0CuKG1euQpqcuY0tn0m769kYn7Narc-B8_3_gQ-gqIXFGKJ_sdrvYawO2N63RsYV-UlXzmHIaU3aERkme00gUhTgOO0loRFKRnaIz75eEpAlP-AhVpXJ1Z_ELrLutWmFlG_yserMFPPs0DeByBcoa-44DVJnfe2WmgKvBtUqDx8biuYOtGda4XKh1De4cnbRq5eHib47R2_3da_kQPc2mj-XtU6Qp4SxSUOfQkBbqglLdZDqti7bhlNV5xjJGWso41yoVTGklRK6zIgMhAkgYp7pIx-hy37tx3ccAvpfLbnA2vJSUCJ6kSV5kgbreU9p13jto5caZtXJfMiHyx6MMHuXBowweZfAog0dJWcjf7PO9U9b3oBeHN_9r-AaF_4OM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2098131674</pqid></control><display><type>article</type><title>Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber</title><source>Scientific.net Journals</source><creator>Jotheeswaran, Bubesh ; Tolle, John ; Wang, Fei ; Lin, Xing ; Demos, Alex ; Gao, Pei Pei</creator><creatorcontrib>Jotheeswaran, Bubesh ; Tolle, John ; Wang, Fei ; Lin, Xing ; Demos, Alex ; Gao, Pei Pei</creatorcontrib><description>Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two distinct chemistries. FTIR and SEM are used to characterize the conversion and sublimation steps of cleaning native oxide, and carbon film etch rate by hydrogen radicals is presented. The carbon cleaning and oxide cleaning capabilities are integrated in Previum chamber and significantly improved cleaning results are supported by SIMS.</description><identifier>ISSN: 1012-0394</identifier><identifier>ISSN: 1662-9779</identifier><identifier>EISSN: 1662-9779</identifier><identifier>DOI: 10.4028/www.scientific.net/SSP.282.25</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><subject>Carbon ; Cleaning ; Organic chemistry ; Silicon germanides ; Sublimation ; Substrates</subject><ispartof>Solid state phenomena, 2018-08, Vol.282, p.25-30</ispartof><rights>2018 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. Aug 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2085-aeb6ed0feb722cd4c3b7fd825b645450f2588ca395aca996c474e99d4c0582c73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/4768?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jotheeswaran, Bubesh</creatorcontrib><creatorcontrib>Tolle, John</creatorcontrib><creatorcontrib>Wang, Fei</creatorcontrib><creatorcontrib>Lin, Xing</creatorcontrib><creatorcontrib>Demos, Alex</creatorcontrib><creatorcontrib>Gao, Pei Pei</creatorcontrib><title>Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber</title><title>Solid state phenomena</title><description>Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two distinct chemistries. FTIR and SEM are used to characterize the conversion and sublimation steps of cleaning native oxide, and carbon film etch rate by hydrogen radicals is presented. The carbon cleaning and oxide cleaning capabilities are integrated in Previum chamber and significantly improved cleaning results are supported by SIMS.</description><subject>Carbon</subject><subject>Cleaning</subject><subject>Organic chemistry</subject><subject>Silicon germanides</subject><subject>Sublimation</subject><subject>Substrates</subject><issn>1012-0394</issn><issn>1662-9779</issn><issn>1662-9779</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkNFKwzAUhoMoOKfvEBAv26Vp0yYXIlJ0CuKG1euQpqcuY0tn0m769kYn7Narc-B8_3_gQ-gqIXFGKJ_sdrvYawO2N63RsYV-UlXzmHIaU3aERkme00gUhTgOO0loRFKRnaIz75eEpAlP-AhVpXJ1Z_ELrLutWmFlG_yserMFPPs0DeByBcoa-44DVJnfe2WmgKvBtUqDx8biuYOtGda4XKh1De4cnbRq5eHib47R2_3da_kQPc2mj-XtU6Qp4SxSUOfQkBbqglLdZDqti7bhlNV5xjJGWso41yoVTGklRK6zIgMhAkgYp7pIx-hy37tx3ccAvpfLbnA2vJSUCJ6kSV5kgbreU9p13jto5caZtXJfMiHyx6MMHuXBowweZfAog0dJWcjf7PO9U9b3oBeHN_9r-AaF_4OM</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Jotheeswaran, Bubesh</creator><creator>Tolle, John</creator><creator>Wang, Fei</creator><creator>Lin, Xing</creator><creator>Demos, Alex</creator><creator>Gao, Pei Pei</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20180801</creationdate><title>Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber</title><author>Jotheeswaran, Bubesh ; Tolle, John ; Wang, Fei ; Lin, Xing ; Demos, Alex ; Gao, Pei Pei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2085-aeb6ed0feb722cd4c3b7fd825b645450f2588ca395aca996c474e99d4c0582c73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Carbon</topic><topic>Cleaning</topic><topic>Organic chemistry</topic><topic>Silicon germanides</topic><topic>Sublimation</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jotheeswaran, Bubesh</creatorcontrib><creatorcontrib>Tolle, John</creatorcontrib><creatorcontrib>Wang, Fei</creatorcontrib><creatorcontrib>Lin, Xing</creatorcontrib><creatorcontrib>Demos, Alex</creatorcontrib><creatorcontrib>Gao, Pei Pei</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Solid state phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jotheeswaran, Bubesh</au><au>Tolle, John</au><au>Wang, Fei</au><au>Lin, Xing</au><au>Demos, Alex</au><au>Gao, Pei Pei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber</atitle><jtitle>Solid state phenomena</jtitle><date>2018-08-01</date><risdate>2018</risdate><volume>282</volume><spage>25</spage><epage>30</epage><pages>25-30</pages><issn>1012-0394</issn><issn>1662-9779</issn><eissn>1662-9779</eissn><abstract>Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two distinct chemistries. FTIR and SEM are used to characterize the conversion and sublimation steps of cleaning native oxide, and carbon film etch rate by hydrogen radicals is presented. The carbon cleaning and oxide cleaning capabilities are integrated in Previum chamber and significantly improved cleaning results are supported by SIMS.</abstract><cop>Zurich</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/SSP.282.25</doi><tpages>6</tpages></addata></record> |
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| subjects | Carbon Cleaning Organic chemistry Silicon germanides Sublimation Substrates |
| title | Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T20%3A48%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Carbon%20Removal%20and%20Native%20Oxide%20Cleaning%20on%20Si%20and%20SiGe%20Surfaces%20in%20Previum%20Chamber&rft.jtitle=Solid%20state%20phenomena&rft.au=Jotheeswaran,%20Bubesh&rft.date=2018-08-01&rft.volume=282&rft.spage=25&rft.epage=30&rft.pages=25-30&rft.issn=1012-0394&rft.eissn=1662-9779&rft_id=info:doi/10.4028/www.scientific.net/SSP.282.25&rft_dat=%3Cproquest_cross%3E2098131674%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2098131674&rft_id=info:pmid/&rfr_iscdi=true |