GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

GaSb/GaAlAsSb uncooled photodiodes for the 1 . 1–1 . 85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10 15 cm –3 . The capacitance of the photodiodes...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-09, Vol.52 (9), p.1215-1220
Hauptverfasser:	Kunitsyna, E. V., Andreev, I. A., Konovalov, G. G., Ivanov, E. V., Pivovarova, A. A., Il’inskaya, N. D., Yakovlev, Yu. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Dark current Magnetic Materials Magnetism Melts Photodiodes Physics Physics and Astronomy Physics of Semiconductor Devices Response time Spectra Spectral sensitivity
Online-Zugang:	Volltext
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