Chemical Treatment of Copper and Aluminum Derived from Waste Crystalline Silicon Solar Cell Modules by Mixed Acids of HNO3 and HCl
In this study, copper (Cu) and aluminum (Al) particles derived from waste crystalline silicon solar cell modules were etched with mixed acid containing HNO 3 and HCl, and the optimal mixing conditions were examined for the purpose of recovering silicon with high yield. The crushed particles of waste...
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Veröffentlicht in: | Journal of sustainable metallurgy 2018-09, Vol.4 (3), p.378-387 |
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creator | Matsubara, Teruaki Uddin, Md. Azhar Kato, Yoshiei Kawanishi, Takanori Hayashi, Yoshiaki |
description | In this study, copper (Cu) and aluminum (Al) particles derived from waste crystalline silicon solar cell modules were etched with mixed acid containing HNO
3
and HCl, and the optimal mixing conditions were examined for the purpose of recovering silicon with high yield. The crushed particles of waste silicon solar cells were used after sieving between 450 and 600 μm particle size. The Cu etching rate decreased with the increasing HCl concentration in the region of HNO
3
/HCl ≧ 3.36, whereas it increased at HNO
3
/HCl |
doi_str_mv | 10.1007/s40831-018-0184-2 |
format | Article |
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3
and HCl, and the optimal mixing conditions were examined for the purpose of recovering silicon with high yield. The crushed particles of waste silicon solar cells were used after sieving between 450 and 600 μm particle size. The Cu etching rate decreased with the increasing HCl concentration in the region of HNO
3
/HCl ≧ 3.36, whereas it increased at HNO
3
/HCl < 3.36. The Al etching rate increased when HCl was added, although it was almost independent of the amount of HNO
3
. 99.6% silicon purity was achieved at the treatment time of 30 min. The rate-determining step of Cu and Al etchings was represented by the volume reaction model instead of the surface reaction model. The CuCl coating was observed on the residuals of Cu. The increasing HCl blocked the Cu etching, but the excess Cl
−
promoted the dissolution of CuCl due to complex formation, corresponding to the regions of HNO
3
/HCl ≧ 3.36 and HNO
3
/HCl < 3.36, respectively. In the region of HNO
3
/HCl < 3.36, the spontaneous complete etching time of Cu and Al was achieved with higher HNO
3
concentration of 8.5–10 mol/L.</description><identifier>ISSN: 2199-3823</identifier><identifier>EISSN: 2199-3831</identifier><identifier>DOI: 10.1007/s40831-018-0184-2</identifier><language>eng</language><publisher>Cham: Springer International Publishing</publisher><subject>Aluminum ; Chemical treatment ; Complex formation ; Copper ; Copper chloride ; Crystal structure ; Crystallinity ; Earth and Environmental Science ; Environment ; Etching ; Metallic Materials ; Modules ; Organic chemistry ; Photovoltaic cells ; Research Article ; Silicon ; Silicon wafers ; Solar cells ; Sustainable Development</subject><ispartof>Journal of sustainable metallurgy, 2018-09, Vol.4 (3), p.378-387</ispartof><rights>The Minerals, Metals & Materials Society 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-28432149077adf2eeb6e3c8112ca1077ce8580fd6dc91379296d858ae8eeeeff3</citedby><cites>FETCH-LOGICAL-c355t-28432149077adf2eeb6e3c8112ca1077ce8580fd6dc91379296d858ae8eeeeff3</cites><orcidid>0000-0002-3348-1424</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s40831-018-0184-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s40831-018-0184-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Matsubara, Teruaki</creatorcontrib><creatorcontrib>Uddin, Md. Azhar</creatorcontrib><creatorcontrib>Kato, Yoshiei</creatorcontrib><creatorcontrib>Kawanishi, Takanori</creatorcontrib><creatorcontrib>Hayashi, Yoshiaki</creatorcontrib><title>Chemical Treatment of Copper and Aluminum Derived from Waste Crystalline Silicon Solar Cell Modules by Mixed Acids of HNO3 and HCl</title><title>Journal of sustainable metallurgy</title><addtitle>J. Sustain. Metall</addtitle><description>In this study, copper (Cu) and aluminum (Al) particles derived from waste crystalline silicon solar cell modules were etched with mixed acid containing HNO
3
and HCl, and the optimal mixing conditions were examined for the purpose of recovering silicon with high yield. The crushed particles of waste silicon solar cells were used after sieving between 450 and 600 μm particle size. The Cu etching rate decreased with the increasing HCl concentration in the region of HNO
3
/HCl ≧ 3.36, whereas it increased at HNO
3
/HCl < 3.36. The Al etching rate increased when HCl was added, although it was almost independent of the amount of HNO
3
. 99.6% silicon purity was achieved at the treatment time of 30 min. The rate-determining step of Cu and Al etchings was represented by the volume reaction model instead of the surface reaction model. The CuCl coating was observed on the residuals of Cu. The increasing HCl blocked the Cu etching, but the excess Cl
−
promoted the dissolution of CuCl due to complex formation, corresponding to the regions of HNO
3
/HCl ≧ 3.36 and HNO
3
/HCl < 3.36, respectively. In the region of HNO
3
/HCl < 3.36, the spontaneous complete etching time of Cu and Al was achieved with higher HNO
3
concentration of 8.5–10 mol/L.</description><subject>Aluminum</subject><subject>Chemical treatment</subject><subject>Complex formation</subject><subject>Copper</subject><subject>Copper chloride</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Earth and Environmental Science</subject><subject>Environment</subject><subject>Etching</subject><subject>Metallic Materials</subject><subject>Modules</subject><subject>Organic chemistry</subject><subject>Photovoltaic cells</subject><subject>Research Article</subject><subject>Silicon</subject><subject>Silicon wafers</subject><subject>Solar cells</subject><subject>Sustainable Development</subject><issn>2199-3823</issn><issn>2199-3831</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1UE1Lw0AUDKJg0f4Abwueo_uRdJNjiR8VWntoxeOy3bzolk027iZir_5yN0b05IPhPYaZeTBRdEHwFcGYX_sEZ4zEmGQDkpgeRRNK8jxmgT7-vSk7jabe7zHGlLOEczKJPotXqLWSBm0dyK6GpkO2QoVtW3BINiWam77WTV-jG3D6HUpUOVujZ-k7QIU7-E4aoxtAG220sg3aWCMdKsAYtLJlb8Cj3QGt9EewzpUu_ZC_eFyz7_RFYc6jk0oaD9OffRY93d1ui0W8XN8_FPNlrFiadjHNEkZJkmPOZVlRgN0MmMoIoUqSQCrI0gxX5axUOWE8p_msDIyEDMJUFTuLLsfc1tm3Hnwn9rZ3TXgpKM5pGiphPKjIqFLOeu-gEq3TtXQHQbAY2hZj2yI0PSARNHjo6PFB27yA-0v-3_QFiN2BdA</recordid><startdate>20180901</startdate><enddate>20180901</enddate><creator>Matsubara, Teruaki</creator><creator>Uddin, Md. Azhar</creator><creator>Kato, Yoshiei</creator><creator>Kawanishi, Takanori</creator><creator>Hayashi, Yoshiaki</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3348-1424</orcidid></search><sort><creationdate>20180901</creationdate><title>Chemical Treatment of Copper and Aluminum Derived from Waste Crystalline Silicon Solar Cell Modules by Mixed Acids of HNO3 and HCl</title><author>Matsubara, Teruaki ; Uddin, Md. Azhar ; Kato, Yoshiei ; Kawanishi, Takanori ; Hayashi, Yoshiaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-28432149077adf2eeb6e3c8112ca1077ce8580fd6dc91379296d858ae8eeeeff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Aluminum</topic><topic>Chemical treatment</topic><topic>Complex formation</topic><topic>Copper</topic><topic>Copper chloride</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Earth and Environmental Science</topic><topic>Environment</topic><topic>Etching</topic><topic>Metallic Materials</topic><topic>Modules</topic><topic>Organic chemistry</topic><topic>Photovoltaic cells</topic><topic>Research Article</topic><topic>Silicon</topic><topic>Silicon wafers</topic><topic>Solar cells</topic><topic>Sustainable Development</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsubara, Teruaki</creatorcontrib><creatorcontrib>Uddin, Md. Azhar</creatorcontrib><creatorcontrib>Kato, Yoshiei</creatorcontrib><creatorcontrib>Kawanishi, Takanori</creatorcontrib><creatorcontrib>Hayashi, Yoshiaki</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of sustainable metallurgy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsubara, Teruaki</au><au>Uddin, Md. Azhar</au><au>Kato, Yoshiei</au><au>Kawanishi, Takanori</au><au>Hayashi, Yoshiaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical Treatment of Copper and Aluminum Derived from Waste Crystalline Silicon Solar Cell Modules by Mixed Acids of HNO3 and HCl</atitle><jtitle>Journal of sustainable metallurgy</jtitle><stitle>J. Sustain. Metall</stitle><date>2018-09-01</date><risdate>2018</risdate><volume>4</volume><issue>3</issue><spage>378</spage><epage>387</epage><pages>378-387</pages><issn>2199-3823</issn><eissn>2199-3831</eissn><abstract>In this study, copper (Cu) and aluminum (Al) particles derived from waste crystalline silicon solar cell modules were etched with mixed acid containing HNO
3
and HCl, and the optimal mixing conditions were examined for the purpose of recovering silicon with high yield. The crushed particles of waste silicon solar cells were used after sieving between 450 and 600 μm particle size. The Cu etching rate decreased with the increasing HCl concentration in the region of HNO
3
/HCl ≧ 3.36, whereas it increased at HNO
3
/HCl < 3.36. The Al etching rate increased when HCl was added, although it was almost independent of the amount of HNO
3
. 99.6% silicon purity was achieved at the treatment time of 30 min. The rate-determining step of Cu and Al etchings was represented by the volume reaction model instead of the surface reaction model. The CuCl coating was observed on the residuals of Cu. The increasing HCl blocked the Cu etching, but the excess Cl
−
promoted the dissolution of CuCl due to complex formation, corresponding to the regions of HNO
3
/HCl ≧ 3.36 and HNO
3
/HCl < 3.36, respectively. In the region of HNO
3
/HCl < 3.36, the spontaneous complete etching time of Cu and Al was achieved with higher HNO
3
concentration of 8.5–10 mol/L.</abstract><cop>Cham</cop><pub>Springer International Publishing</pub><doi>10.1007/s40831-018-0184-2</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-3348-1424</orcidid></addata></record> |
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source | Springer Nature - Complete Springer Journals |
subjects | Aluminum Chemical treatment Complex formation Copper Copper chloride Crystal structure Crystallinity Earth and Environmental Science Environment Etching Metallic Materials Modules Organic chemistry Photovoltaic cells Research Article Silicon Silicon wafers Solar cells Sustainable Development |
title | Chemical Treatment of Copper and Aluminum Derived from Waste Crystalline Silicon Solar Cell Modules by Mixed Acids of HNO3 and HCl |
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