Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability

Extreme ultraviolet interference lithography (EUV-IL) is used to manufacture topographical guiding patterns to direct the self-assembly of block copolymers. High-accuracy silicon oxide-like patterns with trenches ranging from 68 nm to 117 nm width are fabricated by exposing a hydrogen silsesquioxane...

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Veröffentlicht in:	Soft matter 2018, Vol.14 (33), p.6799-688
Hauptverfasser:	Gottlieb, Steven, Kazazis, Dimitrios, Mochi, Iacopo, Evangelio, Laura, Fernández-Regúlez, Marta, Ekinci, Yasin, Perez-Murano, Francesc
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Block copolymers Copolymers Dependence Emergence Free energy Model accuracy Morphology Patterning Polymethyl methacrylate Polymethylmethacrylate Polystyrene Polystyrene resins Roughness Self-assembly Silicon oxide Silicon oxides
Online-Zugang:	Volltext
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