Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of th...
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| Veröffentlicht in: | arXiv.org 2006-06 |
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| creator | Jacquemet, Mathieu Domenech, Manuela Dion, Julie Strassner, Martin Lucas-Leclin, Gaelle Georges, Patrick Sagnes, Isabelle Garnache, Arnaud |
| description | This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW. |
| doi_str_mv | 10.48550/arxiv.0606211 |
| format | Article |
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| language | eng |
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| source | Free E- Journals |
| subjects | Continuous radiation High power lasers Lasers Semiconductor lasers Substrates Thermal resistance |
| title | Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser |
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