Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Progress in crystal growth and characterization of materials 2017-12, Vol.63 (4), p.105-120
Hauptverfasser:	Li, Qiang, Lau, Kei May
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimonides Arsenides Electronics Electronics industry Epitaxial growth Optoelectronics Phosphides Photonics Semiconductor devices Silicon Silicon substrates Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!