Synthesis, characterization, resistivity and magnetoresistance of Ba2Fe1−xGaxMoO6 double perovskite
Effect of Ga addition on structure, resistivity and magnetoresistance of Ba 2 Fe 1−x Ga x MoO 6 (x = 0.0, 0.1, 0.25 and 0.3) double perovskite. The sol–gel procedure was used to synthesize Ba 2 Fe 1−x Ga x MoO 6 double perovskite and consolidated at 1150 °C under Ar/H 2 atmosphere. Single phase with...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2018-10, Vol.29 (19), p.16639-16646 |
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| creator | Markandeya, Y. Suresh Reddy, Y. Varaprasad, S. Suresh, K. Bhikshamaiah, G. |
| description | Effect of Ga addition on structure, resistivity and magnetoresistance of Ba
2
Fe
1−x
Ga
x
MoO
6
(x = 0.0, 0.1, 0.25 and 0.3) double perovskite. The sol–gel procedure was used to synthesize Ba
2
Fe
1−x
Ga
x
MoO
6
double perovskite and consolidated at 1150 °C under Ar/H
2
atmosphere. Single phase with cubic crystal structure confirmed for all the samples through X-ray diffraction studies. Variation of grain size behavior on the samples surface has been studied by scanning electron microscopy (SEM). The spectra from energy dispersive X-ray spectroscopy (EDS) showed that all the elements Ba, Fe, Ga, Mo and O are present in the samples and there are no impurities in the materials. Fourier transform infrared spectroscopy (FTIR) spectral analysis of samples produced three characteristic absorption bands of Mo–O and Fe–O vibrations in the wave number range 400–1000 cm
−1
which confirmed the present materials are double perovskite phase. Magneto-resistance (MR %) of these samples reduce with the addition of Ga content at room temperature (RT). Whereas, MR% at 5 K exhibits opposite trend to the MR% at RT with the Ga-content. It is found that all samples show semiconductor behavior at 5 K and changes into metallic nature as temperature increases showing a semiconductor-metallic transition. This value is larger for composition x = 0.3 and smaller for parent compound. |
| doi_str_mv | 10.1007/s10854-018-9756-y |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2088804592</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2088804592</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-803f5cb5a9a8d0c88076ba610cde6457f5caa920f474e440bb0f64f9c12dd9813</originalsourceid><addsrcrecordid>eNp1kM9KwzAcx4MoOKcP4C3gddVf0iRNjypuCpMdVPAW0jSd1a2ZSTZWn8Czj-iT2FHBk6cffP_94IPQKYFzApBdBAKSswSITPKMi6TdQwPCszRhkj7vowHkPEsYp_QQHYXwCgCCpXKA7EPbxBcb6jDC5kV7baL19YeOtWtG2O-MWG_q2GLdlHip542Nrpd1Yyx2Fb7SdGzJ9-fXdqK3924mcOnWxcLilfVuE97qaI_RQaUXwZ783iF6Gt88Xt8m09nk7vpympiUiJhISCtuCq5zLUswUkImCi0ImNIKxrPO1DqnULGMWcagKKASrMoNoWWZS5IO0Vm_u_LufW1DVK9u7ZvupaIguz3Gc9qlSJ8y3oXgbaVWvl5q3yoCakdT9TRVR1PtaKq269C-E7psM7f-b_n_0g--DHrO</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2088804592</pqid></control><display><type>article</type><title>Synthesis, characterization, resistivity and magnetoresistance of Ba2Fe1−xGaxMoO6 double perovskite</title><source>SpringerNature Journals</source><creator>Markandeya, Y. ; Suresh Reddy, Y. ; Varaprasad, S. ; Suresh, K. ; Bhikshamaiah, G.</creator><creatorcontrib>Markandeya, Y. ; Suresh Reddy, Y. ; Varaprasad, S. ; Suresh, K. ; Bhikshamaiah, G.</creatorcontrib><description>Effect of Ga addition on structure, resistivity and magnetoresistance of Ba
2
Fe
1−x
Ga
x
MoO
6
(x = 0.0, 0.1, 0.25 and 0.3) double perovskite. The sol–gel procedure was used to synthesize Ba
2
Fe
1−x
Ga
x
MoO
6
double perovskite and consolidated at 1150 °C under Ar/H
2
atmosphere. Single phase with cubic crystal structure confirmed for all the samples through X-ray diffraction studies. Variation of grain size behavior on the samples surface has been studied by scanning electron microscopy (SEM). The spectra from energy dispersive X-ray spectroscopy (EDS) showed that all the elements Ba, Fe, Ga, Mo and O are present in the samples and there are no impurities in the materials. Fourier transform infrared spectroscopy (FTIR) spectral analysis of samples produced three characteristic absorption bands of Mo–O and Fe–O vibrations in the wave number range 400–1000 cm
−1
which confirmed the present materials are double perovskite phase. Magneto-resistance (MR %) of these samples reduce with the addition of Ga content at room temperature (RT). Whereas, MR% at 5 K exhibits opposite trend to the MR% at RT with the Ga-content. It is found that all samples show semiconductor behavior at 5 K and changes into metallic nature as temperature increases showing a semiconductor-metallic transition. This value is larger for composition x = 0.3 and smaller for parent compound.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-018-9756-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorption spectra ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal structure ; Electrical resistivity ; Energy dispersive X ray spectroscopy ; Fourier transforms ; Gallium ; Infrared analysis ; Iron ; Magnetoresistance ; Magnetoresistivity ; Materials Science ; Molybdenum ; Optical and Electronic Materials ; Perovskites ; Scanning electron microscopy ; Sol-gel processes ; Spectrum analysis ; Wave dispersion ; X-ray diffraction</subject><ispartof>Journal of materials science. Materials in electronics, 2018-10, Vol.29 (19), p.16639-16646</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-803f5cb5a9a8d0c88076ba610cde6457f5caa920f474e440bb0f64f9c12dd9813</citedby><cites>FETCH-LOGICAL-c316t-803f5cb5a9a8d0c88076ba610cde6457f5caa920f474e440bb0f64f9c12dd9813</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-018-9756-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-018-9756-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Markandeya, Y.</creatorcontrib><creatorcontrib>Suresh Reddy, Y.</creatorcontrib><creatorcontrib>Varaprasad, S.</creatorcontrib><creatorcontrib>Suresh, K.</creatorcontrib><creatorcontrib>Bhikshamaiah, G.</creatorcontrib><title>Synthesis, characterization, resistivity and magnetoresistance of Ba2Fe1−xGaxMoO6 double perovskite</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Effect of Ga addition on structure, resistivity and magnetoresistance of Ba
2
Fe
1−x
Ga
x
MoO
6
(x = 0.0, 0.1, 0.25 and 0.3) double perovskite. The sol–gel procedure was used to synthesize Ba
2
Fe
1−x
Ga
x
MoO
6
double perovskite and consolidated at 1150 °C under Ar/H
2
atmosphere. Single phase with cubic crystal structure confirmed for all the samples through X-ray diffraction studies. Variation of grain size behavior on the samples surface has been studied by scanning electron microscopy (SEM). The spectra from energy dispersive X-ray spectroscopy (EDS) showed that all the elements Ba, Fe, Ga, Mo and O are present in the samples and there are no impurities in the materials. Fourier transform infrared spectroscopy (FTIR) spectral analysis of samples produced three characteristic absorption bands of Mo–O and Fe–O vibrations in the wave number range 400–1000 cm
−1
which confirmed the present materials are double perovskite phase. Magneto-resistance (MR %) of these samples reduce with the addition of Ga content at room temperature (RT). Whereas, MR% at 5 K exhibits opposite trend to the MR% at RT with the Ga-content. It is found that all samples show semiconductor behavior at 5 K and changes into metallic nature as temperature increases showing a semiconductor-metallic transition. This value is larger for composition x = 0.3 and smaller for parent compound.</description><subject>Absorption spectra</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystal structure</subject><subject>Electrical resistivity</subject><subject>Energy dispersive X ray spectroscopy</subject><subject>Fourier transforms</subject><subject>Gallium</subject><subject>Infrared analysis</subject><subject>Iron</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Materials Science</subject><subject>Molybdenum</subject><subject>Optical and Electronic Materials</subject><subject>Perovskites</subject><subject>Scanning electron microscopy</subject><subject>Sol-gel processes</subject><subject>Spectrum analysis</subject><subject>Wave dispersion</subject><subject>X-ray diffraction</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kM9KwzAcx4MoOKcP4C3gddVf0iRNjypuCpMdVPAW0jSd1a2ZSTZWn8Czj-iT2FHBk6cffP_94IPQKYFzApBdBAKSswSITPKMi6TdQwPCszRhkj7vowHkPEsYp_QQHYXwCgCCpXKA7EPbxBcb6jDC5kV7baL19YeOtWtG2O-MWG_q2GLdlHip542Nrpd1Yyx2Fb7SdGzJ9-fXdqK3924mcOnWxcLilfVuE97qaI_RQaUXwZ783iF6Gt88Xt8m09nk7vpympiUiJhISCtuCq5zLUswUkImCi0ImNIKxrPO1DqnULGMWcagKKASrMoNoWWZS5IO0Vm_u_LufW1DVK9u7ZvupaIguz3Gc9qlSJ8y3oXgbaVWvl5q3yoCakdT9TRVR1PtaKq269C-E7psM7f-b_n_0g--DHrO</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Markandeya, Y.</creator><creator>Suresh Reddy, Y.</creator><creator>Varaprasad, S.</creator><creator>Suresh, K.</creator><creator>Bhikshamaiah, G.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20181001</creationdate><title>Synthesis, characterization, resistivity and magnetoresistance of Ba2Fe1−xGaxMoO6 double perovskite</title><author>Markandeya, Y. ; Suresh Reddy, Y. ; Varaprasad, S. ; Suresh, K. ; Bhikshamaiah, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-803f5cb5a9a8d0c88076ba610cde6457f5caa920f474e440bb0f64f9c12dd9813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Absorption spectra</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Crystal structure</topic><topic>Electrical resistivity</topic><topic>Energy dispersive X ray spectroscopy</topic><topic>Fourier transforms</topic><topic>Gallium</topic><topic>Infrared analysis</topic><topic>Iron</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Materials Science</topic><topic>Molybdenum</topic><topic>Optical and Electronic Materials</topic><topic>Perovskites</topic><topic>Scanning electron microscopy</topic><topic>Sol-gel processes</topic><topic>Spectrum analysis</topic><topic>Wave dispersion</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Markandeya, Y.</creatorcontrib><creatorcontrib>Suresh Reddy, Y.</creatorcontrib><creatorcontrib>Varaprasad, S.</creatorcontrib><creatorcontrib>Suresh, K.</creatorcontrib><creatorcontrib>Bhikshamaiah, G.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Markandeya, Y.</au><au>Suresh Reddy, Y.</au><au>Varaprasad, S.</au><au>Suresh, K.</au><au>Bhikshamaiah, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis, characterization, resistivity and magnetoresistance of Ba2Fe1−xGaxMoO6 double perovskite</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2018-10-01</date><risdate>2018</risdate><volume>29</volume><issue>19</issue><spage>16639</spage><epage>16646</epage><pages>16639-16646</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Effect of Ga addition on structure, resistivity and magnetoresistance of Ba
2
Fe
1−x
Ga
x
MoO
6
(x = 0.0, 0.1, 0.25 and 0.3) double perovskite. The sol–gel procedure was used to synthesize Ba
2
Fe
1−x
Ga
x
MoO
6
double perovskite and consolidated at 1150 °C under Ar/H
2
atmosphere. Single phase with cubic crystal structure confirmed for all the samples through X-ray diffraction studies. Variation of grain size behavior on the samples surface has been studied by scanning electron microscopy (SEM). The spectra from energy dispersive X-ray spectroscopy (EDS) showed that all the elements Ba, Fe, Ga, Mo and O are present in the samples and there are no impurities in the materials. Fourier transform infrared spectroscopy (FTIR) spectral analysis of samples produced three characteristic absorption bands of Mo–O and Fe–O vibrations in the wave number range 400–1000 cm
−1
which confirmed the present materials are double perovskite phase. Magneto-resistance (MR %) of these samples reduce with the addition of Ga content at room temperature (RT). Whereas, MR% at 5 K exhibits opposite trend to the MR% at RT with the Ga-content. It is found that all samples show semiconductor behavior at 5 K and changes into metallic nature as temperature increases showing a semiconductor-metallic transition. This value is larger for composition x = 0.3 and smaller for parent compound.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-018-9756-y</doi><tpages>8</tpages></addata></record> |
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| source | SpringerNature Journals |
| subjects | Absorption spectra Characterization and Evaluation of Materials Chemistry and Materials Science Crystal structure Electrical resistivity Energy dispersive X ray spectroscopy Fourier transforms Gallium Infrared analysis Iron Magnetoresistance Magnetoresistivity Materials Science Molybdenum Optical and Electronic Materials Perovskites Scanning electron microscopy Sol-gel processes Spectrum analysis Wave dispersion X-ray diffraction |
| title | Synthesis, characterization, resistivity and magnetoresistance of Ba2Fe1−xGaxMoO6 double perovskite |
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