The three-dimensional Anderson model of localization with binary random potential

We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broade...

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Veröffentlicht in:arXiv.org 2003-04
Hauptverfasser: Plyushchay, I V, Roemer, R A, Schreiber, M
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Schreiber, M
description We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu_W, nu_E and nu_x when either disorder W, energy E or concentration x is varied, respectively. All our results are compatible with the universal value nu ~ 1.6 obtained in the single-band Anderson model.
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subjects Amorphous materials
Copper
Electron states
Insulators
Localization
Metal-insulator transition
Metallic glasses
Nickel
Phase diagrams
Qualitative analysis
Three dimensional models
Titanium
title The three-dimensional Anderson model of localization with binary random potential
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