The three-dimensional Anderson model of localization with binary random potential
We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broade...
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creator | Plyushchay, I V Roemer, R A Schreiber, M |
description | We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu_W, nu_E and nu_x when either disorder W, energy E or concentration x is varied, respectively. All our results are compatible with the universal value nu ~ 1.6 obtained in the single-band Anderson model. |
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fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2088756365</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2088756365</sourcerecordid><originalsourceid>FETCH-proquest_journals_20887563653</originalsourceid><addsrcrecordid>eNqNzb0KwjAUQOEgCIq6Ol9wrl6TptZRRHEV3CXaK42kuZrE36fXwQdwOssHR4jhFMd5qTVOTHja-xgV5mqOLdGVSk2zMpeyIwYxnhFRFjOpteqK7a4mSHUgyirbkI-WvXGw8BWFyB4arsgBn8Dx0Tj7NukL4GFTDQfrTXhBML7iBi6cyCdrXF-0T8ZFGvzaE6P1arfcZJfA1xvFtD_zLXwncS-xLGe6UIVW_6kPp3dFow</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2088756365</pqid></control><display><type>article</type><title>The three-dimensional Anderson model of localization with binary random potential</title><source>Free E- Journals</source><creator>Plyushchay, I V ; Roemer, R A ; Schreiber, M</creator><creatorcontrib>Plyushchay, I V ; Roemer, R A ; Schreiber, M</creatorcontrib><description>We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu_W, nu_E and nu_x when either disorder W, energy E or concentration x is varied, respectively. All our results are compatible with the universal value nu ~ 1.6 obtained in the single-band Anderson model.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.0304390</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Amorphous materials ; Copper ; Electron states ; Insulators ; Localization ; Metal-insulator transition ; Metallic glasses ; Nickel ; Phase diagrams ; Qualitative analysis ; Three dimensional models ; Titanium</subject><ispartof>arXiv.org, 2003-04</ispartof><rights>2003. This work is published under https://arxiv.org/licenses/assumed-1991-2003/license.html (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>780,784,27924</link.rule.ids></links><search><creatorcontrib>Plyushchay, I V</creatorcontrib><creatorcontrib>Roemer, R A</creatorcontrib><creatorcontrib>Schreiber, M</creatorcontrib><title>The three-dimensional Anderson model of localization with binary random potential</title><title>arXiv.org</title><description>We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu_W, nu_E and nu_x when either disorder W, energy E or concentration x is varied, respectively. All our results are compatible with the universal value nu ~ 1.6 obtained in the single-band Anderson model.</description><subject>Amorphous materials</subject><subject>Copper</subject><subject>Electron states</subject><subject>Insulators</subject><subject>Localization</subject><subject>Metal-insulator transition</subject><subject>Metallic glasses</subject><subject>Nickel</subject><subject>Phase diagrams</subject><subject>Qualitative analysis</subject><subject>Three dimensional models</subject><subject>Titanium</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNzb0KwjAUQOEgCIq6Ol9wrl6TptZRRHEV3CXaK42kuZrE36fXwQdwOssHR4jhFMd5qTVOTHja-xgV5mqOLdGVSk2zMpeyIwYxnhFRFjOpteqK7a4mSHUgyirbkI-WvXGw8BWFyB4arsgBn8Dx0Tj7NukL4GFTDQfrTXhBML7iBi6cyCdrXF-0T8ZFGvzaE6P1arfcZJfA1xvFtD_zLXwncS-xLGe6UIVW_6kPp3dFow</recordid><startdate>20030417</startdate><enddate>20030417</enddate><creator>Plyushchay, I V</creator><creator>Roemer, R A</creator><creator>Schreiber, M</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20030417</creationdate><title>The three-dimensional Anderson model of localization with binary random potential</title><author>Plyushchay, I V ; Roemer, R A ; Schreiber, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_20887563653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Amorphous materials</topic><topic>Copper</topic><topic>Electron states</topic><topic>Insulators</topic><topic>Localization</topic><topic>Metal-insulator transition</topic><topic>Metallic glasses</topic><topic>Nickel</topic><topic>Phase diagrams</topic><topic>Qualitative analysis</topic><topic>Three dimensional models</topic><topic>Titanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Plyushchay, I V</creatorcontrib><creatorcontrib>Roemer, R A</creatorcontrib><creatorcontrib>Schreiber, M</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Plyushchay, I V</au><au>Roemer, R A</au><au>Schreiber, M</au><format>book</format><genre>document</genre><ristype>GEN</ristype><atitle>The three-dimensional Anderson model of localization with binary random potential</atitle><jtitle>arXiv.org</jtitle><date>2003-04-17</date><risdate>2003</risdate><eissn>2331-8422</eissn><abstract>We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu_W, nu_E and nu_x when either disorder W, energy E or concentration x is varied, respectively. All our results are compatible with the universal value nu ~ 1.6 obtained in the single-band Anderson model.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.0304390</doi><oa>free_for_read</oa></addata></record> |
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subjects | Amorphous materials Copper Electron states Insulators Localization Metal-insulator transition Metallic glasses Nickel Phase diagrams Qualitative analysis Three dimensional models Titanium |
title | The three-dimensional Anderson model of localization with binary random potential |
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