New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54...
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| Veröffentlicht in: | arXiv.org 2003-08 |
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| creator | Ponomarenko, L A D T N de Lang de Visser, A Maude, D Zvonkov, B N Lunin, R A Pruisken, A M M |
| description | We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling. |
| doi_str_mv | 10.48550/arxiv.0308371 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2088712064</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2088712064</sourcerecordid><originalsourceid>FETCH-proquest_journals_20887120643</originalsourceid><addsrcrecordid>eNqNyjsLwjAYheEgCBbt6hxwrn5NeskuSh0Ule4lQ2xT2kRzUX--QfwBTufA-yC0TGGdsTyHDTdv-VwDBUbLdIIiQmmasIyQGYqt7QGAFCXJcxqh40m88EFZ2XbOYqmcxq4T-DxwJ7hPQvHhaoNrw4NyUqugvubiuXJ-xBUfBnwVrRzFAk1vfLAi_u0crfa7elsld6MfXljX9NobFVJDgLEyJVBk9D_1ARKGQyY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2088712064</pqid></control><display><type>article</type><title>New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime</title><source>Free E- Journals</source><creator>Ponomarenko, L A ; D T N de Lang ; de Visser, A ; Maude, D ; Zvonkov, B N ; Lunin, R A ; Pruisken, A M M</creator><creatorcontrib>Ponomarenko, L A ; D T N de Lang ; de Visser, A ; Maude, D ; Zvonkov, B N ; Lunin, R A ; Pruisken, A M M</creatorcontrib><description>We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.0308371</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Electron density ; Fermi liquids ; Heterostructures ; Indium gallium arsenides ; Quantum wells</subject><ispartof>arXiv.org, 2003-08</ispartof><rights>2003. This work is published under https://arxiv.org/licenses/assumed-1991-2003/license.html (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>778,782,27908</link.rule.ids></links><search><creatorcontrib>Ponomarenko, L A</creatorcontrib><creatorcontrib>D T N de Lang</creatorcontrib><creatorcontrib>de Visser, A</creatorcontrib><creatorcontrib>Maude, D</creatorcontrib><creatorcontrib>Zvonkov, B N</creatorcontrib><creatorcontrib>Lunin, R A</creatorcontrib><creatorcontrib>Pruisken, A M M</creatorcontrib><title>New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime</title><title>arXiv.org</title><description>We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.</description><subject>Electron density</subject><subject>Fermi liquids</subject><subject>Heterostructures</subject><subject>Indium gallium arsenides</subject><subject>Quantum wells</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNyjsLwjAYheEgCBbt6hxwrn5NeskuSh0Ule4lQ2xT2kRzUX--QfwBTufA-yC0TGGdsTyHDTdv-VwDBUbLdIIiQmmasIyQGYqt7QGAFCXJcxqh40m88EFZ2XbOYqmcxq4T-DxwJ7hPQvHhaoNrw4NyUqugvubiuXJ-xBUfBnwVrRzFAk1vfLAi_u0crfa7elsld6MfXljX9NobFVJDgLEyJVBk9D_1ARKGQyY</recordid><startdate>20030819</startdate><enddate>20030819</enddate><creator>Ponomarenko, L A</creator><creator>D T N de Lang</creator><creator>de Visser, A</creator><creator>Maude, D</creator><creator>Zvonkov, B N</creator><creator>Lunin, R A</creator><creator>Pruisken, A M M</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20030819</creationdate><title>New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime</title><author>Ponomarenko, L A ; D T N de Lang ; de Visser, A ; Maude, D ; Zvonkov, B N ; Lunin, R A ; Pruisken, A M M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_20887120643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Electron density</topic><topic>Fermi liquids</topic><topic>Heterostructures</topic><topic>Indium gallium arsenides</topic><topic>Quantum wells</topic><toplevel>online_resources</toplevel><creatorcontrib>Ponomarenko, L A</creatorcontrib><creatorcontrib>D T N de Lang</creatorcontrib><creatorcontrib>de Visser, A</creatorcontrib><creatorcontrib>Maude, D</creatorcontrib><creatorcontrib>Zvonkov, B N</creatorcontrib><creatorcontrib>Lunin, R A</creatorcontrib><creatorcontrib>Pruisken, A M M</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ponomarenko, L A</au><au>D T N de Lang</au><au>de Visser, A</au><au>Maude, D</au><au>Zvonkov, B N</au><au>Lunin, R A</au><au>Pruisken, A M M</au><format>book</format><genre>document</genre><ristype>GEN</ristype><atitle>New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime</atitle><jtitle>arXiv.org</jtitle><date>2003-08-19</date><risdate>2003</risdate><eissn>2331-8422</eissn><abstract>We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.0308371</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Electron density Fermi liquids Heterostructures Indium gallium arsenides Quantum wells |
| title | New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime |
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