Preparation and characterization of Sb2Se3 devices for memory applications

In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET...

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Bibliographische Detailangaben

Hauptverfasser:	N., Shylashree, V., Uma B., S., Dhanush, Abachi, Sagar, A., Nisarga, K., Aashith, G., Sangeetha B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Antimony compounds Memory devices Phase change materials Selenides
Online-Zugang:	Volltext
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