Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of f...

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Veröffentlicht in:	Applied physics letters 2018-05, Vol.112 (22)
Hauptverfasser:	Ali, T., Polakowski, P., Riedel, S., Büttner, T., Kämpfe, T., Rudolph, M., Pätzold, B., Seidel, K., Löhr, D., Hoffmann, R., Czernohorsky, M., Kühnel, K., Thrun, X., Hanisch, N., Steinke, P., Calvo, J., Müller, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Cycle ratio Dependence Ferroelectric materials Ferroelectricity Film thickness Hafnium oxide Physics Silicon Zirconium oxides
Online-Zugang:	Volltext
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