Noise in Al single electron transistors of stacked design

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5 - 7)...

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Veröffentlicht in:	arXiv.org 1998-04
Hauptverfasser:	Krupenin, V A, Presnov, D E, Savvateev, M N, Scherer, H, Zorin, A B, Niemeyer, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Background noise Electrons Noise Semiconductor devices Single-electron transistors Substrates Transistors Tunnel junctions Variation
Online-Zugang:	Volltext
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