Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy

The Zn acceptor level position in GaN:Zn was studied on specially designed GaN(undoped)/GaN:Zn([Zn] = 5 × 1016 cm−3) structures by contactless electroreflectance. A well-defined Franz-Keldysh oscillation is present in optical spectra which results from the built-in electric field present in the near...

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Veröffentlicht in:	Applied physics letters 2018-07, Vol.113 (3)
Hauptverfasser:	Janicki, Łukasz, Mohajerani, Matin Sadat, Hartmann, Jana, Zdanowicz, Ewelina, Wehmann, Hergo-Heinrich, Waag, Andreas, Kudrawiec, Robert
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Conduction bands Fermi level Fermi surfaces Gallium nitrides Ionization Spectrum analysis Surface layers
Online-Zugang:	Volltext
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