α-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics
GeTe is the simplest known binary ferroelectric semiconductor with a narrow band gap. Below 700 K it assumes a non-centrosymmetric rhombohedral structure in which an electric dipole is formed due to a relative Ge/Te sublattice displacement along the [111] direction. Ferroelectric polarization result...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | |
| container_title | |
| container_volume | 1996 |
| creator | Krempaský, J. Springholz, G. Minár, J. Dil, J. H. |
| description | GeTe is the simplest known binary ferroelectric semiconductor with a narrow band gap. Below 700 K it assumes a non-centrosymmetric rhombohedral structure in which an electric dipole is formed due to a relative Ge/Te sublattice displacement along the [111] direction. Ferroelectric polarization results from asymmetric positions of Ge and Te atoms along that direction and ensures that the system possess a well-defined axis for symmetry breaking, resulting in a giant Rashba-type spin splitting of the bulk band structure. We report on first-principle calculations which indicate that the large lattice distortion responsible for the ferroelectric order is also the most significant ingredient for the giant Rashba-type spin-splitting. We review the experimental verification of this giant Rashba-type splitting and show the main results proving that (GeMn)Te is a new paradigm multiferroic semiconductor with magnetoelectic properties, offering broad opportunities for spintronics materials design. |
| doi_str_mv | 10.1063/1.5048878 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2086305359</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2086305359</sourcerecordid><originalsourceid>FETCH-LOGICAL-p288t-fda8be8cd648ec4555a63b2e33f114125a019ebb912f3473a629d9b51623cf083</originalsourceid><addsrcrecordid>eNp9kMtKAzEARYMoWKsL_yDgRoWpeU_irhQdhYqbCu5CJg-ZYpMxmSp-lj_iN1lpwZ2ry4XDvXAAOMVogpGgV3jCEZOylntghDnHVS2w2AcjhBSrCKPPh-ColCVCRNW1HIHZ91fV-IWHJjp43viHeLEpxa86m6Jb2yHlcg2nMPoP2JtsXPeygiFlWPouDjnFzpZjcBDMa_EnuxyDp9ubxeyumj8297PpvOqJlEMVnJGtl9YJJr1lnHMjaEs8pQFjhgk3CCvftgqTQFlNjSDKqZZjQagNSNIxONvu9jm9rX0Z9DKtc9xcaoKkoIhTrjbU5ZYqthvM0KWo-9ytTP7UGOlfSRrrnaT_4PeU_0Ddu0B_AEWKZrU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2086305359</pqid></control><display><type>conference_proceeding</type><title>α-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics</title><source>AIP Journals Complete</source><creator>Krempaský, J. ; Springholz, G. ; Minár, J. ; Dil, J. H.</creator><contributor>Jamnicky, Igor ; Sitek, Jozef ; Vajda, Jan</contributor><creatorcontrib>Krempaský, J. ; Springholz, G. ; Minár, J. ; Dil, J. H. ; Jamnicky, Igor ; Sitek, Jozef ; Vajda, Jan</creatorcontrib><description>GeTe is the simplest known binary ferroelectric semiconductor with a narrow band gap. Below 700 K it assumes a non-centrosymmetric rhombohedral structure in which an electric dipole is formed due to a relative Ge/Te sublattice displacement along the [111] direction. Ferroelectric polarization results from asymmetric positions of Ge and Te atoms along that direction and ensures that the system possess a well-defined axis for symmetry breaking, resulting in a giant Rashba-type spin splitting of the bulk band structure. We report on first-principle calculations which indicate that the large lattice distortion responsible for the ferroelectric order is also the most significant ingredient for the giant Rashba-type spin-splitting. We review the experimental verification of this giant Rashba-type splitting and show the main results proving that (GeMn)Te is a new paradigm multiferroic semiconductor with magnetoelectic properties, offering broad opportunities for spintronics materials design.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.5048878</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Broken symmetry ; Electric dipoles ; Ferroelectric materials ; Ferroelectricity ; First principles ; Magnetic properties ; Spintronics ; Splitting</subject><ispartof>AIP conference proceedings, 2018, Vol.1996 (1)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/1.5048878$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902,76353</link.rule.ids></links><search><contributor>Jamnicky, Igor</contributor><contributor>Sitek, Jozef</contributor><contributor>Vajda, Jan</contributor><creatorcontrib>Krempaský, J.</creatorcontrib><creatorcontrib>Springholz, G.</creatorcontrib><creatorcontrib>Minár, J.</creatorcontrib><creatorcontrib>Dil, J. H.</creatorcontrib><title>α-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics</title><title>AIP conference proceedings</title><description>GeTe is the simplest known binary ferroelectric semiconductor with a narrow band gap. Below 700 K it assumes a non-centrosymmetric rhombohedral structure in which an electric dipole is formed due to a relative Ge/Te sublattice displacement along the [111] direction. Ferroelectric polarization results from asymmetric positions of Ge and Te atoms along that direction and ensures that the system possess a well-defined axis for symmetry breaking, resulting in a giant Rashba-type spin splitting of the bulk band structure. We report on first-principle calculations which indicate that the large lattice distortion responsible for the ferroelectric order is also the most significant ingredient for the giant Rashba-type spin-splitting. We review the experimental verification of this giant Rashba-type splitting and show the main results proving that (GeMn)Te is a new paradigm multiferroic semiconductor with magnetoelectic properties, offering broad opportunities for spintronics materials design.</description><subject>Broken symmetry</subject><subject>Electric dipoles</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>First principles</subject><subject>Magnetic properties</subject><subject>Spintronics</subject><subject>Splitting</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2018</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp9kMtKAzEARYMoWKsL_yDgRoWpeU_irhQdhYqbCu5CJg-ZYpMxmSp-lj_iN1lpwZ2ry4XDvXAAOMVogpGgV3jCEZOylntghDnHVS2w2AcjhBSrCKPPh-ColCVCRNW1HIHZ91fV-IWHJjp43viHeLEpxa86m6Jb2yHlcg2nMPoP2JtsXPeygiFlWPouDjnFzpZjcBDMa_EnuxyDp9ubxeyumj8297PpvOqJlEMVnJGtl9YJJr1lnHMjaEs8pQFjhgk3CCvftgqTQFlNjSDKqZZjQagNSNIxONvu9jm9rX0Z9DKtc9xcaoKkoIhTrjbU5ZYqthvM0KWo-9ytTP7UGOlfSRrrnaT_4PeU_0Ddu0B_AEWKZrU</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Krempaský, J.</creator><creator>Springholz, G.</creator><creator>Minár, J.</creator><creator>Dil, J. H.</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180801</creationdate><title>α-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics</title><author>Krempaský, J. ; Springholz, G. ; Minár, J. ; Dil, J. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p288t-fda8be8cd648ec4555a63b2e33f114125a019ebb912f3473a629d9b51623cf083</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Broken symmetry</topic><topic>Electric dipoles</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>First principles</topic><topic>Magnetic properties</topic><topic>Spintronics</topic><topic>Splitting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krempaský, J.</creatorcontrib><creatorcontrib>Springholz, G.</creatorcontrib><creatorcontrib>Minár, J.</creatorcontrib><creatorcontrib>Dil, J. H.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krempaský, J.</au><au>Springholz, G.</au><au>Minár, J.</au><au>Dil, J. H.</au><au>Jamnicky, Igor</au><au>Sitek, Jozef</au><au>Vajda, Jan</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>α-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics</atitle><btitle>AIP conference proceedings</btitle><date>2018-08-01</date><risdate>2018</risdate><volume>1996</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>GeTe is the simplest known binary ferroelectric semiconductor with a narrow band gap. Below 700 K it assumes a non-centrosymmetric rhombohedral structure in which an electric dipole is formed due to a relative Ge/Te sublattice displacement along the [111] direction. Ferroelectric polarization results from asymmetric positions of Ge and Te atoms along that direction and ensures that the system possess a well-defined axis for symmetry breaking, resulting in a giant Rashba-type spin splitting of the bulk band structure. We report on first-principle calculations which indicate that the large lattice distortion responsible for the ferroelectric order is also the most significant ingredient for the giant Rashba-type spin-splitting. We review the experimental verification of this giant Rashba-type splitting and show the main results proving that (GeMn)Te is a new paradigm multiferroic semiconductor with magnetoelectic properties, offering broad opportunities for spintronics materials design.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5048878</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2018, Vol.1996 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_proquest_journals_2086305359 |
| source | AIP Journals Complete |
| subjects | Broken symmetry Electric dipoles Ferroelectric materials Ferroelectricity First principles Magnetic properties Spintronics Splitting |
| title | α-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T20%3A30%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=%CE%B1-GeTe%20and%20(GeMn)Te%20semiconductors:%20A%20new%20paradigm%20for%20spintronics&rft.btitle=AIP%20conference%20proceedings&rft.au=Krempask%C3%BD,%20J.&rft.date=2018-08-01&rft.volume=1996&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/1.5048878&rft_dat=%3Cproquest_scita%3E2086305359%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2086305359&rft_id=info:pmid/&rfr_iscdi=true |