Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) c...

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Veröffentlicht in:	Journal of applied physics 2018-08, Vol.124 (5)
Hauptverfasser:	Choi, F. S., Griffiths, J. T., Ren, Chris, Lee, K. B., Zaidi, Z. H., Houston, P. A., Guiney, I., Humphreys, C. J., Oliver, R. A., Wallis, D. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Buffer layers High electron mobility transistors Leakage Metalorganic chemical vapor deposition Microscopy Morphology Organic chemicals Organic chemistry Secondary ion mass spectrometry Semiconductor devices Silicon substrates Transistors Transmission electron microscopy
Online-Zugang:	Volltext
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