Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) c...
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container_title | Journal of applied physics |
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creator | Choi, F. S. Griffiths, J. T. Ren, Chris Lee, K. B. Zaidi, Z. H. Houston, P. A. Guiney, I. Humphreys, C. J. Oliver, R. A. Wallis, D. J. |
description | Control of leakage currents in the buffer layers of GaN based transistors on Si
substrates is vital for the demonstration of high performance devices. Here, we show that
the growth conditions during the metal organic chemical vapour deposition growth of the
graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage.
Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission
electron microscopy, we investigate the origins of leakage paths and show that they result
from the preferential incorporation of oxygen impurities on the side wall facets of the
inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN
SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant
increase in the breakdown voltage can be achieved even in much thinner buffer layer
structures. These results demonstrate the importance of controlling the morphology of the
high electron mobility transistor buffer layer as even at a very low density the leakage
paths identified would provide leakage paths in large area devices. |
doi_str_mv | 10.1063/1.5027680 |
format | Article |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2086295529</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2086295529</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-50290b7c3b9dd5552789bcdd7931470a37add07e8b978428b1c52d2f213fd5973</originalsourceid><addsrcrecordid>eNqd0E1LAzEQBuAgCtbqwX8Q8KSwOkmaJjlK0SoUPfh1DNkk26ZuNzVJhf57V1rw7mlgeOadYRA6J3BNYMxuyDUHKsYSDtCAgFSV4BwO0QCAkkoqoY7RSc5LAEIkUwP08e5TCda0uPXm08w9Xnm7MF3IKxw6PDVPOHb4JeBFmC-wb70tqW-sYh3aULa4JNPlkEtMuN40jU-4NVuf8ik6akyb_dm-DtHb_d3r5KGaPU8fJ7ezyo6oLFV_rIJaWFYr5zjnVEhVW-eEYmQkwDBhnAPhZa2E7CdqYjl1tKGENY4rwYboYpe7TvFr43PRy7hJXb9SU5BjqvpM1avLnbIp5px8o9cprEzaagL692-a6P3fenu1s9mGYkqI3f_wd0x_UK9dw34Ao0R68A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2086295529</pqid></control><display><type>article</type><title>Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Choi, F. S. ; Griffiths, J. T. ; Ren, Chris ; Lee, K. B. ; Zaidi, Z. H. ; Houston, P. A. ; Guiney, I. ; Humphreys, C. J. ; Oliver, R. A. ; Wallis, D. J.</creator><creatorcontrib>Choi, F. S. ; Griffiths, J. T. ; Ren, Chris ; Lee, K. B. ; Zaidi, Z. H. ; Houston, P. A. ; Guiney, I. ; Humphreys, C. J. ; Oliver, R. A. ; Wallis, D. J.</creatorcontrib><description>Control of leakage currents in the buffer layers of GaN based transistors on Si
substrates is vital for the demonstration of high performance devices. Here, we show that
the growth conditions during the metal organic chemical vapour deposition growth of the
graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage.
Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission
electron microscopy, we investigate the origins of leakage paths and show that they result
from the preferential incorporation of oxygen impurities on the side wall facets of the
inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN
SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant
increase in the breakdown voltage can be achieved even in much thinner buffer layer
structures. These results demonstrate the importance of controlling the morphology of the
high electron mobility transistor buffer layer as even at a very low density the leakage
paths identified would provide leakage paths in large area devices.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5027680</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Applied physics ; Buffer layers ; High electron mobility transistors ; Leakage ; Metalorganic chemical vapor deposition ; Microscopy ; Morphology ; Organic chemicals ; Organic chemistry ; Secondary ion mass spectrometry ; Semiconductor devices ; Silicon substrates ; Transistors ; Transmission electron microscopy</subject><ispartof>Journal of applied physics, 2018-08, Vol.124 (5)</ispartof><rights>Author(s)</rights><rights>2018 Author(s).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-50290b7c3b9dd5552789bcdd7931470a37add07e8b978428b1c52d2f213fd5973</citedby><cites>FETCH-LOGICAL-c428t-50290b7c3b9dd5552789bcdd7931470a37add07e8b978428b1c52d2f213fd5973</cites><orcidid>0000-0001-5053-3380 ; 0000-0003-0029-3993 ; 0000-0002-2088-6166 ; 0000-0001-6907-9317 ; 0000-0002-0787-6713 ; 0000-0002-1198-1372</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5027680$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Choi, F. S.</creatorcontrib><creatorcontrib>Griffiths, J. T.</creatorcontrib><creatorcontrib>Ren, Chris</creatorcontrib><creatorcontrib>Lee, K. B.</creatorcontrib><creatorcontrib>Zaidi, Z. H.</creatorcontrib><creatorcontrib>Houston, P. A.</creatorcontrib><creatorcontrib>Guiney, I.</creatorcontrib><creatorcontrib>Humphreys, C. J.</creatorcontrib><creatorcontrib>Oliver, R. A.</creatorcontrib><creatorcontrib>Wallis, D. J.</creatorcontrib><title>Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers</title><title>Journal of applied physics</title><description>Control of leakage currents in the buffer layers of GaN based transistors on Si
substrates is vital for the demonstration of high performance devices. Here, we show that
the growth conditions during the metal organic chemical vapour deposition growth of the
graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage.
Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission
electron microscopy, we investigate the origins of leakage paths and show that they result
from the preferential incorporation of oxygen impurities on the side wall facets of the
inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN
SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant
increase in the breakdown voltage can be achieved even in much thinner buffer layer
structures. These results demonstrate the importance of controlling the morphology of the
high electron mobility transistor buffer layer as even at a very low density the leakage
paths identified would provide leakage paths in large area devices.</description><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>Buffer layers</subject><subject>High electron mobility transistors</subject><subject>Leakage</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Secondary ion mass spectrometry</subject><subject>Semiconductor devices</subject><subject>Silicon substrates</subject><subject>Transistors</subject><subject>Transmission electron microscopy</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX8Q8KSwOkmaJjlK0SoUPfh1DNkk26ZuNzVJhf57V1rw7mlgeOadYRA6J3BNYMxuyDUHKsYSDtCAgFSV4BwO0QCAkkoqoY7RSc5LAEIkUwP08e5TCda0uPXm08w9Xnm7MF3IKxw6PDVPOHb4JeBFmC-wb70tqW-sYh3aULa4JNPlkEtMuN40jU-4NVuf8ik6akyb_dm-DtHb_d3r5KGaPU8fJ7ezyo6oLFV_rIJaWFYr5zjnVEhVW-eEYmQkwDBhnAPhZa2E7CdqYjl1tKGENY4rwYboYpe7TvFr43PRy7hJXb9SU5BjqvpM1avLnbIp5px8o9cprEzaagL692-a6P3fenu1s9mGYkqI3f_wd0x_UK9dw34Ao0R68A</recordid><startdate>20180807</startdate><enddate>20180807</enddate><creator>Choi, F. S.</creator><creator>Griffiths, J. T.</creator><creator>Ren, Chris</creator><creator>Lee, K. B.</creator><creator>Zaidi, Z. H.</creator><creator>Houston, P. A.</creator><creator>Guiney, I.</creator><creator>Humphreys, C. J.</creator><creator>Oliver, R. A.</creator><creator>Wallis, D. J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5053-3380</orcidid><orcidid>https://orcid.org/0000-0003-0029-3993</orcidid><orcidid>https://orcid.org/0000-0002-2088-6166</orcidid><orcidid>https://orcid.org/0000-0001-6907-9317</orcidid><orcidid>https://orcid.org/0000-0002-0787-6713</orcidid><orcidid>https://orcid.org/0000-0002-1198-1372</orcidid></search><sort><creationdate>20180807</creationdate><title>Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers</title><author>Choi, F. S. ; Griffiths, J. T. ; Ren, Chris ; Lee, K. B. ; Zaidi, Z. H. ; Houston, P. A. ; Guiney, I. ; Humphreys, C. J. ; Oliver, R. A. ; Wallis, D. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-50290b7c3b9dd5552789bcdd7931470a37add07e8b978428b1c52d2f213fd5973</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>Buffer layers</topic><topic>High electron mobility transistors</topic><topic>Leakage</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Microscopy</topic><topic>Morphology</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Secondary ion mass spectrometry</topic><topic>Semiconductor devices</topic><topic>Silicon substrates</topic><topic>Transistors</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, F. S.</creatorcontrib><creatorcontrib>Griffiths, J. T.</creatorcontrib><creatorcontrib>Ren, Chris</creatorcontrib><creatorcontrib>Lee, K. B.</creatorcontrib><creatorcontrib>Zaidi, Z. H.</creatorcontrib><creatorcontrib>Houston, P. A.</creatorcontrib><creatorcontrib>Guiney, I.</creatorcontrib><creatorcontrib>Humphreys, C. J.</creatorcontrib><creatorcontrib>Oliver, R. A.</creatorcontrib><creatorcontrib>Wallis, D. J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, F. S.</au><au>Griffiths, J. T.</au><au>Ren, Chris</au><au>Lee, K. B.</au><au>Zaidi, Z. H.</au><au>Houston, P. A.</au><au>Guiney, I.</au><au>Humphreys, C. J.</au><au>Oliver, R. A.</au><au>Wallis, D. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers</atitle><jtitle>Journal of applied physics</jtitle><date>2018-08-07</date><risdate>2018</risdate><volume>124</volume><issue>5</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Control of leakage currents in the buffer layers of GaN based transistors on Si
substrates is vital for the demonstration of high performance devices. Here, we show that
the growth conditions during the metal organic chemical vapour deposition growth of the
graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage.
Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission
electron microscopy, we investigate the origins of leakage paths and show that they result
from the preferential incorporation of oxygen impurities on the side wall facets of the
inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN
SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant
increase in the breakdown voltage can be achieved even in much thinner buffer layer
structures. These results demonstrate the importance of controlling the morphology of the
high electron mobility transistor buffer layer as even at a very low density the leakage
paths identified would provide leakage paths in large area devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5027680</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5053-3380</orcidid><orcidid>https://orcid.org/0000-0003-0029-3993</orcidid><orcidid>https://orcid.org/0000-0002-2088-6166</orcidid><orcidid>https://orcid.org/0000-0001-6907-9317</orcidid><orcidid>https://orcid.org/0000-0002-0787-6713</orcidid><orcidid>https://orcid.org/0000-0002-1198-1372</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Aluminum gallium nitrides Applied physics Buffer layers High electron mobility transistors Leakage Metalorganic chemical vapor deposition Microscopy Morphology Organic chemicals Organic chemistry Secondary ion mass spectrometry Semiconductor devices Silicon substrates Transistors Transmission electron microscopy |
title | Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers |
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