Characterization of an InGaAs/InP single-photon detector at 200 MHz gate rate

We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs printed circuit boards and features a semiconductor-based se...

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Veröffentlicht in:	arXiv.org 2011-05
Hauptverfasser:	Healey, Chris, Lucio-Martinez, Itzel, Lamont, Michael R E, Mo, Xiaofan, Tittel, Wolfgang
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Circuit boards Circuit design Differential amplifiers Indium gallium arsenides Indium phosphides Infrared detectors Photodiodes Photon avalanches Photons Post-processing Sensors Subtraction Vibration
Online-Zugang:	Volltext
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