The Research on Static Characteristics of 3300V/50A Planner NPT-IGBT

A 3300V/50A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose of the p-wel...

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Veröffentlicht in:	Applied Mechanics and Materials 2014-06, Vol.568-570, p.1201-1206
Hauptverfasser:	Bao, Hai Long, Gao, Ming Chao, Liu, Jun, Zhao, Ge, Liu, Jiang, Jin, Rui, Yu, Kun Shan
Format:	Artikel
Sprache:	eng
Schlagworte:	Semiconductors Simulation Static characteristics
Online-Zugang:	Volltext
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