Ab initio calculation of energy levels for phosphorus donors in silicon

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electr...

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Veröffentlicht in:	arXiv.org 2016-12
Hauptverfasser:	Smith, J S, Budi, A, Per, M C, Vogt, N, Drumm, D W, Hollenberg, L C L, Cole, J H, Russo, S P
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic radius Density functional theory Design parameters Donors (electronic) Electronic devices Energy levels First principles Manifolds Phosphorus Silicon
Online-Zugang:	Volltext
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