Forward and reverse bias current–voltage (I–V) characteristics in the metal–ferroelectric–semiconductor (Au/SrTiO3/n-Si) structures at room temperature

The main electrical parameters of fabricated Au/SrTiO 3 /n-Si (MFS) structures have been investigated by using various methods. The values of ideality factor (n) and zero-bias barrier height (Φ B0 ) are calculated from the forward bias current–voltage (I F –V F ) data as 0.60, and 0.48 eV from therm...

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