Use of model-based library in critical dimension measurement by CD-SEM
•MBL database has been constructed and used to CD metrology by an up-to-date MC model.•SE linescan sensitive to key characteristic parameters of specimen structure.•The standardization of matching of MBL and observing SE image are studied in detail. Model-based library (MBL) method, based on the fun...
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| Veröffentlicht in: | Measurement : journal of the International Measurement Confederation 2018-07, Vol.123, p.150-162 |
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| container_title | Measurement : journal of the International Measurement Confederation |
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| creator | Zou, Y.B. Khan, M.S.S. Li, H.M. Li, Y.G. Li, W. Gao, S.T. Liu, L.S. Ding, Z.J. |
| description | •MBL database has been constructed and used to CD metrology by an up-to-date MC model.•SE linescan sensitive to key characteristic parameters of specimen structure.•The standardization of matching of MBL and observing SE image are studied in detail.
Model-based library (MBL) method, based on the fundamental physics of electron-solid interaction and Monte Carlo simulation of electron transport and secondary electron (SE) cascades, is an ideal algorithm in critical dimension (CD) metrology by CD-SEM, which exceeds the experiential structure characterization with SE profile curve. Particularly, comparing to the threshold method, the MBL method can extends to 3D metrology of CD by including many more geometrical structural parameters, such as, top CD, bottom CD, height and sidewall angles. In this work, we study the SE signal profile shape in CD metrology for the MBL method. The gate lines in trapezoidal cross section shape with arc corners are modeled for the simulation of SE linescans. The sensitivity of the SE intensity profiles to the different topographic parameters are investigated. In addition, the practical aspects of CD evaluation including pre-processing of experimental SE image and profile matching procedure are discussed. The work will be beneficial to the related standardization of CD measurement. |
| doi_str_mv | 10.1016/j.measurement.2018.02.069 |
| format | Article |
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Model-based library (MBL) method, based on the fundamental physics of electron-solid interaction and Monte Carlo simulation of electron transport and secondary electron (SE) cascades, is an ideal algorithm in critical dimension (CD) metrology by CD-SEM, which exceeds the experiential structure characterization with SE profile curve. Particularly, comparing to the threshold method, the MBL method can extends to 3D metrology of CD by including many more geometrical structural parameters, such as, top CD, bottom CD, height and sidewall angles. In this work, we study the SE signal profile shape in CD metrology for the MBL method. The gate lines in trapezoidal cross section shape with arc corners are modeled for the simulation of SE linescans. The sensitivity of the SE intensity profiles to the different topographic parameters are investigated. In addition, the practical aspects of CD evaluation including pre-processing of experimental SE image and profile matching procedure are discussed. The work will be beneficial to the related standardization of CD measurement.</description><identifier>ISSN: 0263-2241</identifier><identifier>EISSN: 1873-412X</identifier><identifier>DOI: 10.1016/j.measurement.2018.02.069</identifier><language>eng</language><publisher>London: Elsevier Ltd</publisher><subject>Angles (geometry) ; Cascades ; CD-SEM ; Computer simulation ; Critical dimension ; Electron transport ; Electrons ; Mathematical models ; Metrology ; Model-based library ; Monte Carlo simulation ; Parameter sensitivity ; Scanning electron microscopy ; Secondary electron ; Standardization ; Structural analysis</subject><ispartof>Measurement : journal of the International Measurement Confederation, 2018-07, Vol.123, p.150-162</ispartof><rights>2018 Elsevier Ltd</rights><rights>Copyright Elsevier Science Ltd. Jul 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-d511b4a3d351e7c31930c1d2e7604636d3d17f903e91121e341e7ea9096e2a4d3</citedby><cites>FETCH-LOGICAL-c415t-d511b4a3d351e7c31930c1d2e7604636d3d17f903e91121e341e7ea9096e2a4d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.measurement.2018.02.069$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids></links><search><creatorcontrib>Zou, Y.B.</creatorcontrib><creatorcontrib>Khan, M.S.S.</creatorcontrib><creatorcontrib>Li, H.M.</creatorcontrib><creatorcontrib>Li, Y.G.</creatorcontrib><creatorcontrib>Li, W.</creatorcontrib><creatorcontrib>Gao, S.T.</creatorcontrib><creatorcontrib>Liu, L.S.</creatorcontrib><creatorcontrib>Ding, Z.J.</creatorcontrib><title>Use of model-based library in critical dimension measurement by CD-SEM</title><title>Measurement : journal of the International Measurement Confederation</title><description>•MBL database has been constructed and used to CD metrology by an up-to-date MC model.•SE linescan sensitive to key characteristic parameters of specimen structure.•The standardization of matching of MBL and observing SE image are studied in detail.
Model-based library (MBL) method, based on the fundamental physics of electron-solid interaction and Monte Carlo simulation of electron transport and secondary electron (SE) cascades, is an ideal algorithm in critical dimension (CD) metrology by CD-SEM, which exceeds the experiential structure characterization with SE profile curve. Particularly, comparing to the threshold method, the MBL method can extends to 3D metrology of CD by including many more geometrical structural parameters, such as, top CD, bottom CD, height and sidewall angles. In this work, we study the SE signal profile shape in CD metrology for the MBL method. The gate lines in trapezoidal cross section shape with arc corners are modeled for the simulation of SE linescans. The sensitivity of the SE intensity profiles to the different topographic parameters are investigated. In addition, the practical aspects of CD evaluation including pre-processing of experimental SE image and profile matching procedure are discussed. The work will be beneficial to the related standardization of CD measurement.</description><subject>Angles (geometry)</subject><subject>Cascades</subject><subject>CD-SEM</subject><subject>Computer simulation</subject><subject>Critical dimension</subject><subject>Electron transport</subject><subject>Electrons</subject><subject>Mathematical models</subject><subject>Metrology</subject><subject>Model-based library</subject><subject>Monte Carlo simulation</subject><subject>Parameter sensitivity</subject><subject>Scanning electron microscopy</subject><subject>Secondary electron</subject><subject>Standardization</subject><subject>Structural analysis</subject><issn>0263-2241</issn><issn>1873-412X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEYhIMoWKv_IeJ517zJbrY5Sm1VqHjQgreQTd6FLPtRk63Qf2-kHnr0NJeZZ5gh5BZYDgzkfZv3aOI-YI_DlHMGi5zxnEl1RmawqERWAP88JzPGpcg4L-CSXMXYMsakUHJG1tuIdGxoPzrsstpEdLTzdTDhQP1AbfCTt6ajzqeC6MeBnvTR-kCXj9n76vWaXDSmi3jzp3OyXa8-ls_Z5u3pZfmwyWwB5ZS5EqAujHCiBKysACWYBcexkqyQQjrhoGoUE6gAOKAokg2NYkoiN4UTc3J35O7C-LXHOOl23IchVWrOqkQtSw7JpY4uG8YYAzZ6F3yfJmlg-vc23eqTGfr3Ns24Trel7PKYxTTj22PQ0XocLDof0E7ajf4flB9xWnrL</recordid><startdate>201807</startdate><enddate>201807</enddate><creator>Zou, Y.B.</creator><creator>Khan, M.S.S.</creator><creator>Li, H.M.</creator><creator>Li, Y.G.</creator><creator>Li, W.</creator><creator>Gao, S.T.</creator><creator>Liu, L.S.</creator><creator>Ding, Z.J.</creator><general>Elsevier Ltd</general><general>Elsevier Science Ltd</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201807</creationdate><title>Use of model-based library in critical dimension measurement by CD-SEM</title><author>Zou, Y.B. ; Khan, M.S.S. ; Li, H.M. ; Li, Y.G. ; Li, W. ; Gao, S.T. ; Liu, L.S. ; Ding, Z.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-d511b4a3d351e7c31930c1d2e7604636d3d17f903e91121e341e7ea9096e2a4d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Angles (geometry)</topic><topic>Cascades</topic><topic>CD-SEM</topic><topic>Computer simulation</topic><topic>Critical dimension</topic><topic>Electron transport</topic><topic>Electrons</topic><topic>Mathematical models</topic><topic>Metrology</topic><topic>Model-based library</topic><topic>Monte Carlo simulation</topic><topic>Parameter sensitivity</topic><topic>Scanning electron microscopy</topic><topic>Secondary electron</topic><topic>Standardization</topic><topic>Structural analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zou, Y.B.</creatorcontrib><creatorcontrib>Khan, M.S.S.</creatorcontrib><creatorcontrib>Li, H.M.</creatorcontrib><creatorcontrib>Li, Y.G.</creatorcontrib><creatorcontrib>Li, W.</creatorcontrib><creatorcontrib>Gao, S.T.</creatorcontrib><creatorcontrib>Liu, L.S.</creatorcontrib><creatorcontrib>Ding, Z.J.</creatorcontrib><collection>CrossRef</collection><jtitle>Measurement : journal of the International Measurement Confederation</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zou, Y.B.</au><au>Khan, M.S.S.</au><au>Li, H.M.</au><au>Li, Y.G.</au><au>Li, W.</au><au>Gao, S.T.</au><au>Liu, L.S.</au><au>Ding, Z.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Use of model-based library in critical dimension measurement by CD-SEM</atitle><jtitle>Measurement : journal of the International Measurement Confederation</jtitle><date>2018-07</date><risdate>2018</risdate><volume>123</volume><spage>150</spage><epage>162</epage><pages>150-162</pages><issn>0263-2241</issn><eissn>1873-412X</eissn><abstract>•MBL database has been constructed and used to CD metrology by an up-to-date MC model.•SE linescan sensitive to key characteristic parameters of specimen structure.•The standardization of matching of MBL and observing SE image are studied in detail.
Model-based library (MBL) method, based on the fundamental physics of electron-solid interaction and Monte Carlo simulation of electron transport and secondary electron (SE) cascades, is an ideal algorithm in critical dimension (CD) metrology by CD-SEM, which exceeds the experiential structure characterization with SE profile curve. Particularly, comparing to the threshold method, the MBL method can extends to 3D metrology of CD by including many more geometrical structural parameters, such as, top CD, bottom CD, height and sidewall angles. In this work, we study the SE signal profile shape in CD metrology for the MBL method. The gate lines in trapezoidal cross section shape with arc corners are modeled for the simulation of SE linescans. The sensitivity of the SE intensity profiles to the different topographic parameters are investigated. In addition, the practical aspects of CD evaluation including pre-processing of experimental SE image and profile matching procedure are discussed. The work will be beneficial to the related standardization of CD measurement.</abstract><cop>London</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.measurement.2018.02.069</doi><tpages>13</tpages></addata></record> |
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| ispartof | Measurement : journal of the International Measurement Confederation, 2018-07, Vol.123, p.150-162 |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Angles (geometry) Cascades CD-SEM Computer simulation Critical dimension Electron transport Electrons Mathematical models Metrology Model-based library Monte Carlo simulation Parameter sensitivity Scanning electron microscopy Secondary electron Standardization Structural analysis |
| title | Use of model-based library in critical dimension measurement by CD-SEM |
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