Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

In an attempt to realize the high-quality and highly efficient polishing of SiC, the anodic oxidation mechanism of SiC was studied to enable the application of electrochemical mechanical polishing (ECMP). Through linear scanning voltammetry (LSV) and anodic oxidation experiments, the etch pits on th...

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Veröffentlicht in:	Electrochimica acta 2018-05, Vol.271, p.666-676
Hauptverfasser:	Yang, Xu, Sun, Rongyan, Ohkubo, Yuji, Kawai, Kentaro, Arima, Kenta, Endo, Katsuyoshi, Yamamura, Kazuya
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodic oxidation mechanism Anodizing Atomic force microscopy Charge transfer Chemical-mechanical polishing Conductivity Diffusion Electric properties Electrochemical mechanical polishing Etch pits Organic chemistry Oxidation SiC Substrates Voltammetry
Online-Zugang:	Volltext
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