Structure and Thermoelectric Properties of Nanostructured Bi1−x Sb x Alloys Synthesized by Mechanical Alloying
We report on the synthesis of Bi1−xSbx alloys and the investigation of the relationship between their structural and thermoelectric properties. In order to produce a compound that will work efficiently even above room temperature, Bi1−xSbx alloys were chosen, as they are known to be the best suited...
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| Veröffentlicht in: | Journal of electronic materials 2018-10, Vol.47 (10), p.6007-6015 |
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| creator | Güneş, Ekrem Landschreiber, Bernadette Homm, Gert Wiegand, Christoph Tomeš, Petr Will, Christian Elm, Matthias T Paschen, Silke Klar, Peter J Schlecht, Sabine Wickleder, Mathias S |
| description | We report on the synthesis of Bi1−xSbx alloys and the investigation of the relationship between their structural and thermoelectric properties. In order to produce a compound that will work efficiently even above room temperature, Bi1−xSbx alloys were chosen, as they are known to be the best suited n-type thermoelectric materials in the low-temperature regime (200 K). Using a top–down method, we produced nanostructured Bi1−xSbx powders by ball-milling in the whole composition range of 0 |
| doi_str_mv | 10.1007/s11664-018-6487-z |
| format | Article |
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In order to produce a compound that will work efficiently even above room temperature, Bi1−xSbx alloys were chosen, as they are known to be the best suited n-type thermoelectric materials in the low-temperature regime (200 K). Using a top–down method, we produced nanostructured Bi1−xSbx powders by ball-milling in the whole composition range of 0 < x < 1.0. Nanostructuring of Bi1−xSbx alloys increases the band gap and thus results in an enlargement of the semiconducting composition region (0 ≤ x ≤ 0.5) compared to its bulk counterpart (0.07 ≤ x ≤ 0.22). The enhancement of the band gap strongly affects the transport properties of the alloys, i.e. the electrical conductivity and the Seebeck coefficient. Moreover, nanostructuring reduces the thermal conductivity through the implementation of grain boundaries as phonon-scattering centers, leading to a significant enhancement of the thermoelectric properties. The highest figure-of-merit observed in this study is 0.25 which was found for Bi0.87Sb0.13 at 280 K.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-018-6487-z</identifier><language>eng</language><publisher>Warrendale: Springer Nature B.V</publisher><subject>Ball milling ; Band gap ; Composition ; Electrical resistivity ; Enlargement ; Grain boundaries ; Mechanical alloying ; Nanostructure ; Seebeck effect ; Thermal conductivity ; Thermoelectric materials</subject><ispartof>Journal of electronic materials, 2018-10, Vol.47 (10), p.6007-6015</ispartof><rights>Journal of Electronic Materials is a copyright of Springer, (2018). 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The highest figure-of-merit observed in this study is 0.25 which was found for Bi0.87Sb0.13 at 280 K.</description><subject>Ball milling</subject><subject>Band gap</subject><subject>Composition</subject><subject>Electrical resistivity</subject><subject>Enlargement</subject><subject>Grain boundaries</subject><subject>Mechanical alloying</subject><subject>Nanostructure</subject><subject>Seebeck effect</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNqNyjFOwzAUgGELgUQoHIDtScwGvyZ2vAICsRQhpUO3ynVfiatgB9uRmp6AmSNyEioBO9M__B9jlyiuUYj6JiEqVXGBmqtK13x_xAqUVclRq8UxK0SpkMtpKU_ZWUpbIVCixoL1TY6DzUMkMH4N85biW6CObI7OwksMPcXsKEHYwLPxIf3xNdw5_Pr43EGzgh3cdl0YEzSjzy0ltz_81Qgzsq3xzpruBzj_es5ONqZLdPHbCbt6fJjfP_E-hveBUl5uwxD9YS2nQtVSKK1l-T_1DXfPUwI</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Güneş, Ekrem</creator><creator>Landschreiber, Bernadette</creator><creator>Homm, Gert</creator><creator>Wiegand, Christoph</creator><creator>Tomeš, Petr</creator><creator>Will, Christian</creator><creator>Elm, Matthias T</creator><creator>Paschen, Silke</creator><creator>Klar, Peter J</creator><creator>Schlecht, Sabine</creator><creator>Wickleder, Mathias S</creator><general>Springer Nature B.V</general><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20181001</creationdate><title>Structure and Thermoelectric Properties of Nanostructured Bi1−x Sb x Alloys Synthesized by Mechanical Alloying</title><author>Güneş, Ekrem ; 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In order to produce a compound that will work efficiently even above room temperature, Bi1−xSbx alloys were chosen, as they are known to be the best suited n-type thermoelectric materials in the low-temperature regime (200 K). Using a top–down method, we produced nanostructured Bi1−xSbx powders by ball-milling in the whole composition range of 0 < x < 1.0. Nanostructuring of Bi1−xSbx alloys increases the band gap and thus results in an enlargement of the semiconducting composition region (0 ≤ x ≤ 0.5) compared to its bulk counterpart (0.07 ≤ x ≤ 0.22). The enhancement of the band gap strongly affects the transport properties of the alloys, i.e. the electrical conductivity and the Seebeck coefficient. Moreover, nanostructuring reduces the thermal conductivity through the implementation of grain boundaries as phonon-scattering centers, leading to a significant enhancement of the thermoelectric properties. The highest figure-of-merit observed in this study is 0.25 which was found for Bi0.87Sb0.13 at 280 K.</abstract><cop>Warrendale</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11664-018-6487-z</doi></addata></record> |
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| subjects | Ball milling Band gap Composition Electrical resistivity Enlargement Grain boundaries Mechanical alloying Nanostructure Seebeck effect Thermal conductivity Thermoelectric materials |
| title | Structure and Thermoelectric Properties of Nanostructured Bi1−x Sb x Alloys Synthesized by Mechanical Alloying |
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