Zero-Current Soft-Switching Performance of 1200-V PT Clustered Insulated Gate Bipolar Transistor
Zero-current soft-switching performance of a 1200-V, 20-A punch-through (PT) clustered insulated gate bipolar transistor (CIGBT) is evaluated in this paper. Turn-on over-voltage transients have been witnessed in 2D numerical simulations and experimental results. These have been shown to be influence...
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| Veröffentlicht in: | IEEE transactions on power electronics 2007-07, Vol.22 (4), p.1177-1185 |
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| creator | Nicholls, J.C. Sweet, M.R. Vershinin, K.V. Narayanan, E.M.S. |
| description | Zero-current soft-switching performance of a 1200-V, 20-A punch-through (PT) clustered insulated gate bipolar transistor (CIGBT) is evaluated in this paper. Turn-on over-voltage transients have been witnessed in 2D numerical simulations and experimental results. These have been shown to be influenced by circuit parameters and internal device structure. Conductivity modulation lag within the device is found to be dependant upon dI/dt; however, this alone does not explain the significant over-voltages at turn-on. The device structure is found to influence the magnitude of such voltage peaks. By optimization of the structure, over-voltages can be minimized, resulting in a significant improvement in losses compared to an IGBT. The current bump associated with zero-current turn-off has been analyzed under various dV/dt values and is influenced by circuit capacitance, switching timings, and carrier lifetime. Internal dynamics of the CIGBT have been analyzed to give an insight into the performance under zero-current switching (ZCS). ZCS tests at 600 V, 20 A have shown that the CIGBT performs well with respect to a commercial IGBT of the same rating. Dynamic saturation voltage of the CIGBT has been shown to be 15% lower at room temperatures to that of an equivalent IGBT. |
| doi_str_mv | 10.1109/TPEL.2007.900467 |
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Turn-on over-voltage transients have been witnessed in 2D numerical simulations and experimental results. These have been shown to be influenced by circuit parameters and internal device structure. Conductivity modulation lag within the device is found to be dependant upon dI/dt; however, this alone does not explain the significant over-voltages at turn-on. The device structure is found to influence the magnitude of such voltage peaks. By optimization of the structure, over-voltages can be minimized, resulting in a significant improvement in losses compared to an IGBT. The current bump associated with zero-current turn-off has been analyzed under various dV/dt values and is influenced by circuit capacitance, switching timings, and carrier lifetime. Internal dynamics of the CIGBT have been analyzed to give an insight into the performance under zero-current switching (ZCS). ZCS tests at 600 V, 20 A have shown that the CIGBT performs well with respect to a commercial IGBT of the same rating. Dynamic saturation voltage of the CIGBT has been shown to be 15% lower at room temperatures to that of an equivalent IGBT.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2007.900467</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Charge carrier lifetime ; Circuit properties ; Circuits ; Clustered insulated gate bipolar transistor (CIGBT) ; Clustering ; Conductivity ; Connection and protection apparatus ; Devices ; Dynamics ; Electric currents ; Electric potential ; Electric power ; Electric, optical and optoelectronic circuits ; Electrical engineering. Electrical power engineering ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Insulated gate bipolar transistors ; Mathematical models ; Numerical simulation ; Other multijunction devices. Power transistors. Thyristors ; Performance analysis ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; soft switching ; Switching ; Switching circuits ; Switching, multiplexing, switched capacity circuits ; Timing ; Transistors ; Voltage ; Zero current switching ; zero-current switching (ZCS)</subject><ispartof>IEEE transactions on power electronics, 2007-07, Vol.22 (4), p.1177-1185</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c481t-6d256ce28c27db8fbe6cb986120ef31b653a294ed7802c0038118a20fc852153</citedby><cites>FETCH-LOGICAL-c481t-6d256ce28c27db8fbe6cb986120ef31b653a294ed7802c0038118a20fc852153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4267774$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4267774$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18916841$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nicholls, J.C.</creatorcontrib><creatorcontrib>Sweet, M.R.</creatorcontrib><creatorcontrib>Vershinin, K.V.</creatorcontrib><creatorcontrib>Narayanan, E.M.S.</creatorcontrib><title>Zero-Current Soft-Switching Performance of 1200-V PT Clustered Insulated Gate Bipolar Transistor</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>Zero-current soft-switching performance of a 1200-V, 20-A punch-through (PT) clustered insulated gate bipolar transistor (CIGBT) is evaluated in this paper. Turn-on over-voltage transients have been witnessed in 2D numerical simulations and experimental results. These have been shown to be influenced by circuit parameters and internal device structure. Conductivity modulation lag within the device is found to be dependant upon dI/dt; however, this alone does not explain the significant over-voltages at turn-on. The device structure is found to influence the magnitude of such voltage peaks. By optimization of the structure, over-voltages can be minimized, resulting in a significant improvement in losses compared to an IGBT. The current bump associated with zero-current turn-off has been analyzed under various dV/dt values and is influenced by circuit capacitance, switching timings, and carrier lifetime. Internal dynamics of the CIGBT have been analyzed to give an insight into the performance under zero-current switching (ZCS). ZCS tests at 600 V, 20 A have shown that the CIGBT performs well with respect to a commercial IGBT of the same rating. Dynamic saturation voltage of the CIGBT has been shown to be 15% lower at room temperatures to that of an equivalent IGBT.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Charge carrier lifetime</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Clustered insulated gate bipolar transistor (CIGBT)</subject><subject>Clustering</subject><subject>Conductivity</subject><subject>Connection and protection apparatus</subject><subject>Devices</subject><subject>Dynamics</subject><subject>Electric currents</subject><subject>Electric potential</subject><subject>Electric power</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Insulated gate bipolar transistors</subject><subject>Mathematical models</subject><subject>Numerical simulation</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Performance analysis</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>soft switching</subject><subject>Switching</subject><subject>Switching circuits</subject><subject>Switching, multiplexing, switched capacity circuits</subject><subject>Timing</subject><subject>Transistors</subject><subject>Voltage</subject><subject>Zero current switching</subject><subject>zero-current switching (ZCS)</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc9rFDEUx4NYcK29C16CoJ5m-_Jj8uNol1oLC13o4MFLzGZfdMrsZE1mEP97s2xR8KAQ8gL5vM8j-RLyksGSMbCX3eZ6veQAemkBpNJPyIJZyRpgoJ-SBRjTNsZa8Yw8L-UBgMkW2IJ8-Yw5Nas5Zxwnep_i1Nz_6KfwrR-_0g3mmPLejwFpipRVffOJbjq6GuYyYcYdvR3LPPipnm7qTq_6Qxp8pl32Y-nLlPILchb9UPDisZ6T7sN1t_rYrO9ublfv102Qhk2N2vFWBeQmcL3bmrhFFbbWqDoTo2Bb1QrPrcSdNsADgDCMGc8hBtNy1opz8u6kPeT0fcYyuX1fAg6DHzHNxVkQSmpTy_9IY0CpVgpRybf_JIWUuip1BV__BT6kOY_1uY5XmZF1VQhOUMiplIzRHXK_9_mnY-COEbpjhO4YoTtFWFvePHp9CX6I9VNDX_70GcuqmVXu1YnrEfH3teRKay3FL-4iofE</recordid><startdate>20070701</startdate><enddate>20070701</enddate><creator>Nicholls, J.C.</creator><creator>Sweet, M.R.</creator><creator>Vershinin, K.V.</creator><creator>Narayanan, E.M.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>F28</scope></search><sort><creationdate>20070701</creationdate><title>Zero-Current Soft-Switching Performance of 1200-V PT Clustered Insulated Gate Bipolar Transistor</title><author>Nicholls, J.C. ; Sweet, M.R. ; Vershinin, K.V. ; Narayanan, E.M.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c481t-6d256ce28c27db8fbe6cb986120ef31b653a294ed7802c0038118a20fc852153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Charge carrier lifetime</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Clustered insulated gate bipolar transistor (CIGBT)</topic><topic>Clustering</topic><topic>Conductivity</topic><topic>Connection and protection apparatus</topic><topic>Devices</topic><topic>Dynamics</topic><topic>Electric currents</topic><topic>Electric potential</topic><topic>Electric power</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Insulated gate bipolar transistors</topic><topic>Mathematical models</topic><topic>Numerical simulation</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Performance analysis</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>soft switching</topic><topic>Switching</topic><topic>Switching circuits</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Timing</topic><topic>Transistors</topic><topic>Voltage</topic><topic>Zero current switching</topic><topic>zero-current switching (ZCS)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nicholls, J.C.</creatorcontrib><creatorcontrib>Sweet, M.R.</creatorcontrib><creatorcontrib>Vershinin, K.V.</creatorcontrib><creatorcontrib>Narayanan, E.M.S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nicholls, J.C.</au><au>Sweet, M.R.</au><au>Vershinin, K.V.</au><au>Narayanan, E.M.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Zero-Current Soft-Switching Performance of 1200-V PT Clustered Insulated Gate Bipolar Transistor</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2007-07-01</date><risdate>2007</risdate><volume>22</volume><issue>4</issue><spage>1177</spage><epage>1185</epage><pages>1177-1185</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>Zero-current soft-switching performance of a 1200-V, 20-A punch-through (PT) clustered insulated gate bipolar transistor (CIGBT) is evaluated in this paper. Turn-on over-voltage transients have been witnessed in 2D numerical simulations and experimental results. These have been shown to be influenced by circuit parameters and internal device structure. Conductivity modulation lag within the device is found to be dependant upon dI/dt; however, this alone does not explain the significant over-voltages at turn-on. The device structure is found to influence the magnitude of such voltage peaks. By optimization of the structure, over-voltages can be minimized, resulting in a significant improvement in losses compared to an IGBT. The current bump associated with zero-current turn-off has been analyzed under various dV/dt values and is influenced by circuit capacitance, switching timings, and carrier lifetime. Internal dynamics of the CIGBT have been analyzed to give an insight into the performance under zero-current switching (ZCS). ZCS tests at 600 V, 20 A have shown that the CIGBT performs well with respect to a commercial IGBT of the same rating. Dynamic saturation voltage of the CIGBT has been shown to be 15% lower at room temperatures to that of an equivalent IGBT.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TPEL.2007.900467</doi><tpages>9</tpages></addata></record> |
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| issn | 0885-8993 1941-0107 |
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| subjects | Applied sciences Capacitance Charge carrier lifetime Circuit properties Circuits Clustered insulated gate bipolar transistor (CIGBT) Clustering Conductivity Connection and protection apparatus Devices Dynamics Electric currents Electric potential Electric power Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Insulated gate bipolar transistors Mathematical models Numerical simulation Other multijunction devices. Power transistors. Thyristors Performance analysis Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices soft switching Switching Switching circuits Switching, multiplexing, switched capacity circuits Timing Transistors Voltage Zero current switching zero-current switching (ZCS) |
| title | Zero-Current Soft-Switching Performance of 1200-V PT Clustered Insulated Gate Bipolar Transistor |
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